Zobrazeno 1 - 1
of 1
pro vyhledávání: '"M. Wojitowicz"'
Autor:
L. Callejo, P.H. Liu, O. Kan, R. Grundbacher, R. Tsai, R. Lai, D. Eng, M. Wojitowicz, D. Leung, Y.C. Chou, I. Smorchkova, A. Oki
Publikováno v:
Proceedings GaAs Reliability Workshop, 2003..
Reliability investigation was performed on 0.25 pin AIGaN/GaN HEMTs grown by MOCVD on 2-inch SIC substrates. The devices were fabricated using Northrop Gruminan Space Technology’s (NGST) AlGaNlGaN HEMTs process technology. A temperature step stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f377b3e535f52ba268f2da2fd2fd7f4
https://doi.org/10.1109/gaasrw.2003.183772
https://doi.org/10.1109/gaasrw.2003.183772
