Zobrazeno 1 - 10
of 81
pro vyhledávání: '"M. Wintrebert-Fouquet"'
Autor:
Ashwin K. Rishinaramangalam, Josh D. Brown, Daniel F. Feezell, Qian Gao, Alanna Fernandes, Ian Mann, Satya Barik, Brad Siskavich, P.P.-T. Chen, M. Wintrebert-Fouquet, Mahmoud Behzadirad
Publikováno v:
High-Power Diode Laser Technology XVIII.
The unique growth conditions of BluGlass’ low growth temperature technology Remote Plasma Chemical Vapour Deposition (RPCVD) are capable of producing Activate As-Grown (AAG) buried p-GaN layers. This ability renders RPCVD a highly attractive techni
Autor:
S. Barik, Brown Joshua David, Vincent Chan, A. J. Fernandes, D. Liu, Q. Gao, P. P.-T. Chen, M. Wintrebert-Fouquet, I. Mann
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
The low growth temperature technology Remote Plasma Chemical Vapour Deposition (RPCVD) is currently being developed by BluGlass Ltd. for use in high-brightness LED applications. The unique growth conditions of RPCVD are demonstrated to produce Activa
Autor:
P.P.-T. Chen, M. Wintrebert-Fouquet, James E. Downes, Richard Wuhrer, A. J. Fernandes, Matthew R. Phillips, K.S.A. Butcher
Publikováno v:
Thin Solid Films. 519:1831-1836
The nature of the apparent band-gap shift in polycrystalline indium nitride thin-films, grown by remote-plasma-enhanced chemical vapour deposition at 535 ± 10 °C, has been investigated separately in relation to growth temperature dependent crystall
Publikováno v:
Thin Solid Films. 516:7267-7270
An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low temperature growth technique has the advantage of be
Publikováno v:
physica status solidi c. 4:2285-2288
Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 °C for GaN and between 350 and 570 °C for InN on different substrates. For GaN vast improvemen
Autor:
P.P.-T. Chen, Santosh Shrestha, M. Wintrebert-Fouquet, K. Scott A. Butcher, Heiko Timmers, R. Dogra
Publikováno v:
Journal of Crystal Growth. 288:236-240
Elastic recoil detection with swift heavy ion projectiles enables the direct and calibration-independent quantification of the N/In ratio and the impurity content of indium nitride thin films. The beam-induced dissociation of In and N can either be a
Autor:
Brian F. Usher, P.P.-T. Chen, M. Wintrebert-Fouquet, K. Scott A. Butcher, Santosh Shrestha, Kathryn Prince, Heiko Timmers, Matthew R. Phillips, Richard Wuhrer
Publikováno v:
Journal of Crystal Growth. 288:241-246
The properties of indium nitride grown at various temperatures on c -plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent b
Publikováno v:
physica status solidi (a). 203:66-74
We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a
Autor:
J.W. Jong Wah, J. M. Ferris, Wim Vyverman, Matthew R. Phillips, M. Wintrebert-Fouquet, V. A. Chepurnov, Nemanja Jovanovic, Kenneth Butcher
Publikováno v:
Materials Science and Engineering: C. 25:658-663
The cathodoluminescent and photoluminescent properties of the nanoporous silica frustules of various diatom strains and of natural diatom samples are presented. The spectra are observed to be similar to that of pure silica glass and the phenology is
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 234:291-307
Elastic Recoil Detection analysis of different types of indium nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected with a gas ionisation detector featuring a large detection solid angle. Severe and non-linear nitrogen