Zobrazeno 1 - 10
of 19
pro vyhledávání: '"M. William Carry"'
Autor:
A, Logeswari, N, Prabavathi, M, William Carry, Muthu, Senthil Pandian, K, Anitha, B, Sahaya Infant Lasalle, P, Ramasamy
Publikováno v:
In Journal of Molecular Structure 15 December 2023 1294 Part 2
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:9224-9234
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f499aa2fed533bcc9eb7249a4375ab3a
https://doi.org/10.1007/s10854-021-07244-z
https://doi.org/10.1007/s10854-021-07244-z
Autor:
K. Sudhakar, A. Logeswari, N. Prabavathi, M. William Carry, P. Ramasamy, S. Vinoth Rathan, Muthu Senthil Pandian
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:24115-24124
Lead-free piezoelectric compounds (0.94)(Na0.5Bi0.5)TiO3–(0.06) BaTiO3 [NBBT (94/06)] + x wt.% Nb5+ (x = 0%, 1%, 1.5%, 2%, and 2.5%) were synthesized by the solid-state reaction route and these powders were pelletized and sintered for dielectric an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc91af8d792476862493c53e41aba18
https://doi.org/10.1007/s10854-021-06877-4
https://doi.org/10.1007/s10854-021-06877-4
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:13714-13723
Urgent requirement exists to develop the lead-free piezoelectric energy storage devices, sensors and actuators for the reduction of toxicity in the environment. This paper deals with the lead-free ferroelectric single crystals with excellent piezoele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::011f18502d0f8ba68f3438928fa19069
https://doi.org/10.1007/s10854-020-03929-z
https://doi.org/10.1007/s10854-020-03929-z
Autor:
M William Carry, S Mrinaleni, Edward Prabu Amaladass, Muthu Senthil Pandian, S Vinoth Rathan, P Ramasamy, Awadhesh Mani, Indranil Bhaumik
Publikováno v:
Semiconductor Science and Technology. 37:065023
A ternary chalcogenide AgBiSe2 (ABS) crystal was grown using the Bridgman–Stockbarger technique followed by XRD and Raman shift analysis to verify the structural properties of the ABS crystal. The temperature (300–4.2 K)-dependent resistivity (ρ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3159d50d0958039e01288bc7db7322e
https://doi.org/10.1088/1361-6641/ac5fdb
https://doi.org/10.1088/1361-6641/ac5fdb
Publikováno v:
Materials Letters. 300:130179
The ternary chalcogenide based pristine AgBiSe2 semiconductor single crystal was studied for the temperature dependence dielectric measurement. The anomalous behaviour of dielectric constant and dielectric loss at higher frequency were discussed in d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55c8f6ca93a1cdf39c63412aab90237
https://doi.org/10.1016/j.matlet.2021.130179
https://doi.org/10.1016/j.matlet.2021.130179
Publikováno v:
Materials Letters. 276:128248
The solid solution of 0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3 NBBT94/06 is a promising material to replace Lead (Pb) based piezoelectric materials. The bulk NBBT 94/06 single crystal was successfully grown by the top-seeded solution growth (TSSG) method. Lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b879d94471d16e55f2c9cb3a9ea719
https://doi.org/10.1016/j.matlet.2020.128248
https://doi.org/10.1016/j.matlet.2020.128248
Publikováno v:
Journal of Materials Science: Materials in Electronics; Jun2020, Vol. 31 Issue 12, p9894-9903, 10p
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Akademický článek
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