Zobrazeno 1 - 10
of 27
pro vyhledávání: '"M. Wespel"'
Autor:
Rudiger Quay, M. Wespel, Stefan Müller, Oliver Ambacher, Stefan Moench, Beatrix Weiss, Patrick Waltereit, Richard Reiner
Publikováno v:
IET Power Electronics. 11:681-688
This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39aeb03e81eba1a308e76215584960f0
https://doi.org/10.1049/iet-pel.2017.0397
https://doi.org/10.1049/iet-pel.2017.0397
Autor:
M. Baeumler, Helmer Konstanzer, M. Wespel, Peter Brückner, Stephan Maroldt, Michael Mikulla, Thomas Roedle, Ruediger Quay, Michael Dammann, P.J. van der Wel, Andreas Graff, Martino Lorenzini, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Microelectronics Reliability. 55:1667-1671
The temperature dependence of device degradation of AlGaN/GaN HEMTs on SiC substrate with a gate length of 0.25 μm has been investigated. The critical surface temperature, where device degradation sets in has been determined using drain-current step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a292bc9915a396f34eac45316406fa6
https://doi.org/10.1016/j.microrel.2015.06.042
https://doi.org/10.1016/j.microrel.2015.06.042
Autor:
M. Wespel, Rudiger Quay, Maximilian Dammann, Vladimir Polyakov, Oliver Ambacher, M. Baeumler, Michael Mikulla, Patrick Waltereit, Richard Reiner
Publikováno v:
Microelectronics Reliability. 54:2656-2661
In this work we discuss the influence of the donor-like surface state density (SSD) on leakage currents and the breakdown voltages of AlGaN/GaN heterostructure field-effect transistors (HFET) at high temperature reverse bias (HTRB) step stress. A met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5b1baf89390898c5b6039959e862092
https://doi.org/10.1016/j.microrel.2014.09.016
https://doi.org/10.1016/j.microrel.2014.09.016
Autor:
Oliver Ambacher, Richard Reiner, Michael Mikulla, Dirk Meder, Patrick Waltereit, M. Wespel, Beatrix Weiss, Rudiger Quay
Publikováno v:
2016 IEEE Applied Power Electronics Conference and Exposition (APEC).
This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d53cb2413ca478fbb0832efcb1cc8e91
https://doi.org/10.1109/apec.2016.7468154
https://doi.org/10.1109/apec.2016.7468154
Autor:
Patrick Waltereit, Michael Mikulla, Michael Dammann, Oliver Ambacher, Vladimir Polyakov, Richard Reiner, Rudiger Quay, M. Wespel
In this paper, we investigate the influence of the drain electrode on the dynamic switching behavior of AlGaN/GaN high-electron-mobility transistors on Si substrate. By adding a field plate to the drain electrode, a dramatic increase in the dynamic O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e123a909eefa3c067cfeea309a5bd55b
https://publica.fraunhofer.de/handle/publica/242442
https://publica.fraunhofer.de/handle/publica/242442
Autor:
M. Wespel, Stefan Müller, Oliver Ambacher, Patrick Waltereit, Rudiger Quay, Richard Reiner, Beatrix Weiss
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si technology for high-power conversion applications. The power chip operates as an inverter (D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23af8184a90f294face9dec105f90761
https://doi.org/10.1109/csics.2015.7314516
https://doi.org/10.1109/csics.2015.7314516
Autor:
Martino Lorenzini, Patrick Waltereit, Michael Mikulla, Thomas Roedle, Helmer Konstanzer, Stefan Müller, Roshna George, Michél Simon-Najasek, Oliver Ambacher, Frank Altmann, Paul J. van der Wel, Michael Dammann, Vladimir Polyakov, Rudiger Quay, Fouad Benkhelifa, M. Baeumler, Stephan Maroldt, M. Wespel, Joachim Wagner, Peter Brückner, Andreas Graff, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications.
Long-term stability and reliability of AlGaN/GaN high electron mobility transistors (HEMT) can be validated by various stress tests which allow studying the physical mechanisms responsible for degradation. As the electroluminescence (EL) intensity is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a38084515961c9af906742de97fbec
https://doi.org/10.1117/12.2189521
https://doi.org/10.1117/12.2189521
Autor:
Rudiger Quay, Beatrix Weiss, Michael Schlechtweg, M. Wespel, Patrick Waltereit, Oliver Ambacher, Michael Mikulla, Richard Reiner
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This work introduces an enhanced GaN-HEMT structure that uses separated Schottky contacts as integrated free-wheeling diodes for the reverse operation. The principle is investigated and compared to other integrated reverse-diode concepts. Different d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b75dd82df6ec40c83b6d7ece036b777
https://doi.org/10.1109/ispsd.2015.7123385
https://doi.org/10.1109/ispsd.2015.7123385
Autor:
M. Wespel, Michael Dammann, Michael Mikulla, Oliver Ambacher, Richard Reiner, Vladimir Polyakov, Patrick Waltereit, Beatrix Weiss, Rudiger Quay
Publikováno v:
IRPS
In this work we investigate the dispersion effects of GaN based HEMTs as a function of the off-state stress voltage and the stress time. We characterize the reduction of the drain current in on-state after off-state stress time from 2 μs up to 10 s.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d07efef9d03bf6c748a7c7ad1c044300
https://doi.org/10.1109/irps.2015.7112787
https://doi.org/10.1109/irps.2015.7112787
Autor:
R. Anto, M. Wespel, Michael Mikulla, Dirk Schwantuschke, Peter Brückner, Helmer Konstanzer, Stephan Maroldt, Rudiger Quay, Stefan Müller, Oliver Ambacher, M. Baeumler, Vladimir Polyakov, Michael Dammann
Publikováno v:
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).
The reliability of AlGaN/GaN HEMTs with a gate length of 100 nm suitable for applications up to W-band frequencies has been investigated by on- and off-state DC-stress tests. The extrapolated life time measured using the constant current stress test
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a71d4262e7f8929c8c298c4135329b
https://doi.org/10.1109/iirw.2014.7049524
https://doi.org/10.1109/iirw.2014.7049524