Zobrazeno 1 - 10
of 1 119
pro vyhledávání: '"M. Weisheit"'
Publikováno v:
Assessment for Effective Intervention. 47:234-244
Bayesian regression has emerged as a viable alternative for the estimation of curriculum-based measurement (CBM) growth slopes. Preliminary findings suggest such methods may yield improved efficiency relative to other linear estimators and can be emb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d89cba6b4f6ae2e2ed2962f49ab1696f
https://doi.org/10.1177/15345084211040219
https://doi.org/10.1177/15345084211040219
Akademický článek
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Autor:
Dina H. Triyoso, Elke Erben, Robert Binder, M. Weisheit, Joachim Metzger, Kornelia Dittmar, Hans-Jürgen Engelmann, HH Hidde Brongersma
Publikováno v:
Surface and Interface Analysis. 49:1175-1186
With the transition to ≤28-nm CMOS technology nodes, the surface analytical challenges with regard to steadily decreasing dimensions and still growing materials options raise the demand of high performing surface analysis techniques. Characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd28b97f9762ba36800243f839a22420
https://doi.org/10.1002/sia.6312
https://doi.org/10.1002/sia.6312
Autor:
Ernst Hendrik August Granneman, M. Smits, X. Pags, Robert Binder, K. Vanormelingen, S. Jansen, M. Weisheit, J. Rinderknecht, Kornelia Dittmar
Publikováno v:
Microelectronic Engineering. 171:44-52
In this paper, the influence of the formation history of a thin Ni1-xPtx:Si film on its thermal stability is investigated. Film degradation manifests itself as a transformation of the continuous film into physically separated islands, resulting in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120b7e13c25b9c1d682f129dc385c96a
https://doi.org/10.1016/j.mee.2017.01.028
https://doi.org/10.1016/j.mee.2017.01.028
Autor:
Dmytro Chumakov, Peter Hermann, M. Weisheit, Lukas M. Eng, Michael Hecker, A. V. Shelaev, Jochen Rinderknecht, P. S. Dorozhkin
Publikováno v:
Ultramicroscopy. 111:1630-1635
The spatial resolution and high sensitivity of tip-enhanced Raman spectroscopy allows the characterization of surface features on a nano-scale. This technique is used to visualize silicon-based structures, which are similar in width to the transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5e72e19db5522b56f1a774b09b8e009
https://doi.org/10.1016/j.ultramic.2011.08.009
https://doi.org/10.1016/j.ultramic.2011.08.009
Autor:
Marcel Michling, Dieter Schmeisser, Massimo Tallarida, H. J. Engelmann, M. Weisheit, Krzysztof Kolanek
Publikováno v:
Journal of Nanoparticle Research. 13:5975-5983
Among the methods for depositing thin films, atomic layer deposition is unique for its capability of growing conformal thin films of compounds with a control of composition and thickness at the atomic level. The conformal growth of thin films can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44362d6446b63e8edefe78403c423732
https://doi.org/10.1007/s11051-011-0319-x
https://doi.org/10.1007/s11051-011-0319-x
Autor:
Rolf Stephan, Lutz Wilde, M. Weisheit, Lutz Herrmann, Alexander Wuerfel, Walter Hansch, Torben Kelwing, Hartmut Prinz, Bernhard Trui, Christoph Klein, Inka Richter, Rick Carter, Peter Kücher, S. Mutas, Falk Graetsch, Martin Trentzsch, Susanne Ohsiek, Anita Peeva, Andreas Naumann
Publikováno v:
ECS Transactions. 33:3-14
Future scaling of complementary metal oxide semiconductor (CMOS) technology requires high-k (HK) dielectrics with metal gate (MG) electrodes to realize higher gate capacitances and low gate leakage currents [1]. During the last decade the semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f183ab8e314b3efbdf19c02cd2021381
https://doi.org/10.1149/1.3481586
https://doi.org/10.1149/1.3481586
Autor:
M. Weisheit, P. Sulecki, Paweł Janus, Michael Hecker, Teodor Gotszalk, Grzegorz Wielgoszewski, Yvonne Ritz, Ehrenfried Zschech, Piotr Grabiec, Dariusz Szmigiel
Publikováno v:
Microelectronic Engineering. 87:1370-1374
In this paper, we present a novel micromachined Atomic Force Microscopy (AFM) micro-cantilever equipped with a sharp, conductive platinum tip. The processing sequence proposed in this article integrates a high reproducibility and precise post-process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7bc8d8491b16f3bbbba97adde5fd4e9
https://doi.org/10.1016/j.mee.2009.11.178
https://doi.org/10.1016/j.mee.2009.11.178
Autor:
M. Weisheit, Dmytro Chumakov, Ehrenfried Zschech, Krzysztof. Kolanek, Michael Hecker, Teodor Gotszalk, Piotr T. Dudek, Peter Hermann
Publikováno v:
Thin Solid Films. 518:3267-3272
Nanolithography based on local anodic oxidation (LAO) by atomic force microscopy is a promising technique for patterning strained film nanostructures on the silicon substrates. Due to its versatility and precise control, LAO is suited for preparing w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd3453b9f9603156182d875aae44190
https://doi.org/10.1016/j.tsf.2009.12.104
https://doi.org/10.1016/j.tsf.2009.12.104
Publikováno v:
Microelectronic Engineering. 86:357-360
We report the effect of annealing on electrical and physical characteristics of HfO"2, HfSi"xO"y and HfO"yN"z gate oxide films on Si. Having the largest thickness change of 0.3nm after post deposition annealing (PDA), HfO"yN"z shows the lowest leakag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2af2ceb052349de79b23f47d7a53e28
https://doi.org/10.1016/j.mee.2008.11.012
https://doi.org/10.1016/j.mee.2008.11.012