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pro vyhledávání: '"M. Wakagi"'
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Publikováno v:
Journal of Non-Crystalline Solids. :853-856
The optical gaps of ultrathin amorphous and crystalline silicon films consisting of isolated clusters have been measured at 250°C as continuous functions of film thickness by real time spectroscopic ellipsometry. For c-Si cluster films ∼ 1.2 nm th
Publikováno v:
Physical Review Letters. 75:1122-1125
Real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystalline thins films prepared by plasma-enhanced chemical vapor deposition onto Si substrates. RTSE shows that a significant volume fraction of nondiam
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1917-1923
The growth of diamond thin films in enhanced chemical vapor deposition (CVD) processes requires high substrate temperatures (400–1000 °C) and gas pressures (1 Torr to 1 atm), as well as high‐power excitation of the gas source (e.g., 1 kW microwa
Publikováno v:
Physical Review B. 50:10666-10671
The first-neighbor distance r, its deviation \ensuremath{\Delta}\ensuremath{\sigma}, and bond-angle deviation \ensuremath{\Delta}\ensuremath{\theta} of a-Si and a-Si:H films are determined by extended x-ray-absorption fine-structure and Raman-scatter
Autor:
W. Drawl, Ilsin An, Russell Messier, N.C. Engdahl, Byungyou Hong, M. Wakagi, Robert W. Collins
Publikováno v:
Diamond and Related Materials. 3:431-437
We have applied real-time spectroscopic ellipsometry to monitor the growth of highly uniform, nanocrystalline diamond films by microwave plasma-enhanced chemical vapour deposition. In this study, a unique multichannel instrument is employed to collec
Publikováno v:
Journal of Applied Physics. 118:234505
In order to investigate the effects of interface and bulk properties of gate insulator on the threshold voltage (Vth) and the gate-bias induced instability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), four kinds of TFT struc
Publikováno v:
Applied Physics Letters. 65:3335-3337
The etching of hydrogenated amorphous silicon (a‐Si:H) in thermally generated atomic hydrogen has been investigated in detail, utilizing real time spectroellipsometry for characterization and end‐point detection. When properly controlled, etching
Publikováno v:
Applied Physics Letters. 63:2228-2230
The microstructural evolution of hydrogenated amorphous silicon‐carbon (a‐Si1−xCx:H) alloy thin films with optical gaps of ∼1.95 eV has been characterized by real time spectroscopic ellipsometry versus hydrogen dilution of the reactive gases
Akademický článek
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