Zobrazeno 1 - 10
of 20
pro vyhledávání: '"M. W. Rony"'
Autor:
Kan Li, Xuyi Luo, M. W. Rony, Mariia Gorchichko, Gaspard Hiblot, Stefaan Van Huylenbroeck, Anne Jourdain, Michael L. Alles, Robert A. Reed, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:442-448
Autor:
M. W. Rony, En Xia Zhang, Shintaro Toguchi, Xuyi Luo, Mahmud Reaz, Kan Li, Dimitri Linten, Jerome Mitard, Robert A. Reed, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 69:299-306
Autor:
Arthur F. Witulski, Gabor Karsai, Robert A. Reed, Tim Holman, En Xia Zhang, Kan Li, Jeffrey S. Kauppila, Philippe C. Adell, Andrew C. Daniel, M. W. Rony, Bernard G. Rax, Mahmud Reaz, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1465-1472
Analog-to-digital converters (ADCs) with different topologies respond differently to total ionizing dose (TID). A flexible behavioral modeling approach is proposed for system-level simulation of TID effects in successive-approximation-register (SAR)
Autor:
Jerome Mitard, Robert A. Reed, Ronald D. Schrimpf, Robert A. Weller, M. Brandon Smith, Michael L. Alles, Mariia Gorchichko, Andrew M. Tonigan, Jingtian Fang, Dimitri Linten, Mahmud Reaz, Massimo V. Fischetti, Andrew O'Hara, Kan Li, Sokrates T. Pantelides, Stephanie L. Weeden-Wright, Daniel M. Fleetwood, En Xia Zhang, M. W. Rony
Publikováno v:
IEEE Transactions on Electron Devices. 68:2556-2563
The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length
Autor:
Robert A. Reed, En Xia Zhang, Dimitri Linten, Andrew L. Sternberg, Ronald D. Schrimpf, Michael L. Alles, M. W. Rony, Isaak K. Samsel, Kan Li, Daniel M. Fleetwood, Mahmud Reaz, Stephanie M. Austin, Jerome Mitard
Publikováno v:
IEEE Transactions on Nuclear Science. 68:807-814
Peak transient currents due to pulsed-laser or heavy-ion irradiation of Ge $p$ MOS FinFETs are nearly independent of gate bias. This is because the prompt photocurrent is due primarily to a transient source–drain shunt. In contrast, long-term diffu
Publikováno v:
2016 9th International Conference on Electrical and Computer Engineering (ICECE).
Advances in short channel transistor technology has allowed the emergence of these devices in modern chips. These transistors experience many different types of Short Channel Effects (SCE) that are addressed in this work. Using TCAD simulations, we r
Publikováno v:
2016 19th International Conference on Computer and Information Technology (ICCIT).
Advances in technology has allowed us to demand for high speed and low power devices in modern chips. These transistors are scaled down and examined with multi-gate architecture in order to improve electrostatic control over the channel and reduce po
Publikováno v:
AIP Conference Proceedings; 2023, Vol. 2564 Issue 1, p1-11, 11p
Autor:
Fleetwood, Daniel M.
Publikováno v:
Nanoscale; Aug2023, Vol. 15 Issue 29, p12175-12192, 18p
Autor:
Fleetwood, D. M.
Publikováno v:
Applied Physics Letters; 4/24/2023, Vol. 122 Issue 17, p1-7, 7p