Výsledky vyhledávání - "M. W. Nelson"

Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2

Autor: P. G. Schroeder, Rudy Schlaf, Bruce A. Parkinson, M. W. Nelson

Publikováno v: Surface Science. 459:349-364

Thin films of the polyparaphenylene (PPP) molecule para -quaterphenyl ( p -4P) were grown in ultrahigh vacuum in a multi-step growth procedure on in situ cleaved highly oriented pyrolytic graphite (HOPG) and single crystals of the layered semiconduct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f8e941ae765ec6adf175f7a6dfeda82
https://doi.org/10.1016/s0039-6028(00)00472-6

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Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy

Autor: Hideyuki Murata, Lisa A. Crisafulli, Zakya H. Kafafi, Rudy Schlaf, Charles D. Merritt, M. W. Nelson, Bruce A. Parkinson, P. G. Schroeder

Publikováno v: Surface Science. 450:142-152

A tris (8-hydroxyquinolinato) gallium (Gaq 3 ) thin film was grown in several steps on a previously in situ evaporated Ag thin film. Ultraviolet photoemission spectroscopy (UPS) measurements carried out prior to growth and after each growth step allo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::221d4f45657bea64b6ddfac9cd5e78ef
https://doi.org/10.1016/s0039-6028(00)00232-6

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Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2

Autor: Bruce A. Parkinson, Kenneth W. Nebesny, P. G. Schroeder, Neal R. Armstrong, M. W. Nelson, Paul A. Lee, Rudy Schlaf

Publikováno v: Journal of Applied Physics. 86:1499-1509

Perylene tetracarboxylic dianhydride (PTCDA) thin films were grown in several steps on tin disulfide (SnS2) single crystals and characterized by combined x-ray and ultraviolet photoemission spectroscopy (XPS), (UPS) in order to characterize the front

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27ae2d852771a66674999aa2cbc482db
https://doi.org/10.1063/1.370920

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Influence of electrostatic forces on the imaging process in scanning tunneling microscopy

Autor: R. Stübner, Bruce A. Parkinson, S. Tiefenbacher, Rudy Schlaf, P. G. Schroeder, M. W. Nelson, H. Jungblut

Publikováno v: Thin Solid Films. 331:203-209

We performed scanning tunneling microscopy (STM) experiments on layered semiconductor compound surfaces which suggest a significant influence of electrostatic forces (EF) on the imaging process. We performed STM experiments at varying tunneling biase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77c4e8d0e291009a128b8450504547f6
https://doi.org/10.1016/s0040-6090(98)00920-1

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Influence of electrostatic forces on the investigation of dopant atoms in layered semiconductors by scanning tunneling microscopy/spectroscopy and atomic force microscopy

Autor: M. W. Nelson, Darrell R. Louder, Bruce A. Parkinson, Rudy Schlaf

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1466-1472

Investigation of the atomic scale topography and electronic structure of dopant sites in semiconductor materials is a promising application of scanning probe microscopies. Dopants have been imaged with scanning tunneling microscopy (STM) on and near

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6162fc2cbf379ba1edbc64500f99492c
https://doi.org/10.1116/1.580563

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Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy

Autor: Rudy Schlaf, A. N. Erickson, M. W. Nelson, Bruce A. Parkinson, P. G. Schroeder, C. W. Almgren

Publikováno v: Applied Physics Letters. 74:1421-1423

Tapping-mode atomic force microscopy was used to spatially resolve areas of different doping types on Si wafers patterned by photolithography and subsequent ion implantation. Application of a direct current dc bias between cantilever and sample durin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::250b295161738c8c2245d7638014b5ed
https://doi.org/10.1063/1.123569

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Determination of the electronic structure of organic Schottky contacts by photoemission spectroscopy

Autor: Neal R. Armstrong, Bruce A. Parkinson, Hideyuki Murata, P. G. Schroeder, Lisa A. Crisafulli, M. W. Nelson, Paul A. Lee, Ken W. Nebesny, Zakya H. Kafafi, Charles D. Merritt, Ruediger Schlaf

Publikováno v: SPIE Proceedings.

The alignment of the highest occupied and lowest unoccupied molecular orbitals (HOMO, LUMO) of the organic luminescent semiconductor Gaq 3 relative to the Fermi level of Au was determined by depositing a Gaq 3 thin film in a multi-step growth procedu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::510c690715b61d5508f370e0116b603e
https://doi.org/10.1117/12.372709

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Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases

Autor: M. W. Nelson, Rudy Schlaf, Bruce A. Parkinson, P. G. Schroeder

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:1354

Tapping mode atomic force microscopy with applied bias was used to spatially resolve areas of different doping type on Si wafers patterned with photolithography and subsequent ion implantation. The application of a direct current bias between cantile

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71fc9d1ee836b9a6d85b71051955cf72
https://doi.org/10.1116/1.590760

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Two-Dimensional Dopant Profiling of an Integrated Circuit Using Bias-Applied Phase-Imaging Tapping Mode Atomic Force Microscopy

Autor: Rudy Schlaf, Bruce A. Parkinson, P. G. Schroeder, M. W. Nelson

Publikováno v: Electrochemical and Solid-State Letters. 2:475

Tapping mode atomic force microscopy was used to spatially resolve areas of different doping type and density on a static rando m access memory integrated circuit. The application of a dc bias applied between cantilever and sample during imaging resu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04faf397921ba0d721d86000acf151e6
https://doi.org/10.1149/1.1390875

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