Zobrazeno 1 - 7
of 7
pro vyhledávání: '"M. W. M. van Cleef"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:611-614
Indium tin oxide layers were deposited by reactive thermal evaporation of an In:Sn alloy in an oxygen ambient. The films were evaporated from tungsten (W) and tantalum (Ta) crucibles using a large range of tin concentrations. The influence of the cru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea588c3548499420a8a9d76e6b889bf
https://doi.org/10.1116/1.581626
https://doi.org/10.1116/1.581626
Autor:
Jatindra K. Rath, Francisco Alberto Rubinelli, W. F. van der Weg, C.H.M. van der Werf, M. W. M. van Cleef, Ruud E. I. Schropp
Publikováno v:
Journal of Applied Physics. 82:6089-6095
We have studied by Raman spectroscopy and electro-optical characterization the properties of thin boron doped microcrystalline silicon layers deposited by plasma enhanced chemical vapor deposition (PECVD) on crystalline silicon wafers and on amorphou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::275afff05f06f2828f6830122569005d
https://doi.org/10.1063/1.366479
https://doi.org/10.1063/1.366479
Publikováno v:
Applied Physics Letters. 73:2609-2611
We used the internal photoemission (IPE) technique to accurately determine the valence and conduction band offsets at the a-SiC:H/c-Si interface and investigated with numerical simulations their effects on the photocarrier collection in p+ a-SiC:H/n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecb1c23ff9c0581ed3ae3545ba85f74
https://doi.org/10.1063/1.122521
https://doi.org/10.1063/1.122521
Publikováno v:
MRS Proceedings. 507
We used the internal photoemission technique to determine the exact valence and conduction band offsets at the a-SiC:H/c-Si interface and investigated with numerical simulations their effects on the photocarrier collection in p+a-SiC:H/n c-Si heteroj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27a026d46c74709b6ce7eb938728d331
https://doi.org/10.1557/proc-507-125
https://doi.org/10.1557/proc-507-125
Autor:
Jatindra K. Rath, M. W. M. van Cleef, Francisco Alberto Rubinelli, C.H.M. van der Werf, Ruud E. I. Schropp
Publikováno v:
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.
Microcrystalline-crystalline silicon heterojunction solar cells were made using thin (20 nm) p/sup +//spl mu/c-Si:H window layers on top of 1 /spl Omega/cm n-type c-Si. Microcrystalline layers were obtained using moderate PECVD deposition conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::227695142a4b61d957e209f9ac7d558a
https://doi.org/10.1109/pvsc.1996.564035
https://doi.org/10.1109/pvsc.1996.564035
Publikováno v:
MRS Proceedings. 420
In the present paper we show results of dark current-voltage measurements performed on p+ a- SiC:H/n c-Si heterojunction diodes at various temperatures (100–400K). We investigated the voltage derivative of these J-V curves in order to the distingui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0125c9aec37283d90ad33badaf7f22fc
https://doi.org/10.1557/proc-420-239
https://doi.org/10.1557/proc-420-239
Autor:
Rita Rizzoli, R. Galloni, Ruud E. I. Schropp, Caterina Summonte, E. Centurioni, R. Pinghini, W. F. van der Weg, Jatindra K. Rath, F. A. Rubinelli, M. W. M. van Cleef
Publikováno v:
Scopus-Elsevier
We measured the temperature dependent current–voltage (J–V) characteristics of p a-SiC:H/n c-Si heterojunction solar cells with different doping levels in the p a-SiC:H layer. For heterojunction solar cells with an undoped a-SiC:H layer, S-shaped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece2261ca5628fffc56272ddccf3e908
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068209&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068209&partnerID=MN8TOARS
