Zobrazeno 1 - 10
of 24
pro vyhledávání: '"M. W. Denhoff"'
Autor:
M W Denhoff
Publikováno v:
Journal of Physics D: Applied Physics. 39:1761-1765
The spreading resistance of a round ohmic contact was calculated by solving the Laplace equation using analytical, numerical and finite element methods. From this, formulae were found to calculate accurate values (better than 0.1%) of the spreading r
Autor:
M W Denhoff
Publikováno v:
Journal of Micromechanics and Microengineering. 13:686-692
This paper addresses a relatively simple method of measuring Young's modulus and residual stress in microelectromechanical system (MEMS) type structures. A surface profilometer is used to measure the deflection of thin film fixed–fixed beams due to
Publikováno v:
Superconductor Science and Technology. 12:431-435
We have measured the power dependent microwave properties of a weak link in a YBa2Cu3O7 thin film formed by writing a line of damage using a focused ion beam. The measurement was made using a parallel plate resonator at 5.5 GHz with the weak link wri
Publikováno v:
Canadian Journal of Physics. 70:1124-1132
We have grown a series of CeO2–YBa2Cu3O7 superlattices by pulsed laser deposition. The purpose was to study the growth of an insulator – high temperature superconductor system on a subnanometre scale. This is important for superconducting devices
Publikováno v:
Journal of Applied Physics. 68:4674-4680
A simple linear electrical circuit model is developed to study the ac characteristics of a doping superlattice with selective contacts. Small signal ac measurements at different frequencies were carried out on silicon doping superlattices under rever
Autor:
Mae Gao, M. W. Denhoff
Publikováno v:
Journal of Electronic Materials. 26:941-943
Amorphous fluoropolymer films have low dielectric constants and high chemical resistance and, so, have potential to be used as the insulator for high speed interconnects and as protection layers. Many applications would require high resolution patter
Autor:
John P. McCaffrey, M. W. Denhoff
Publikováno v:
Journal of Applied Physics. 70:3986-3988
Pulsed laser deposition has been used to deposit Y1Ba2Cu3O7 layer on CeO2 buffer layers on (11_02) sapphire. Both layers are epitaxial with the 〈110〉 direction of the CeO2 layer aligned with the 〈2_021〉 direction of the sapphire substrate. Th
Publikováno v:
Canadian Journal of Physics. 69:192-194
Thin films of MgO were deposited on p-type monocrystalline Si substrates as buffer layers for high-Tc superconductor/Si hybrid devices. After heat treatment at temperatures in the range from 700 to 1100 °C, the MgO films were removed and Ag/p-Si Sch
Autor:
M. W. Denhoff
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1035
A clean, stable boron evaporator has been designed and constructed. The design involves heating one end of a boron rod by a combination of radiation and electron beam heating. The evaporator was tested by doping polycrystalline silicon thin films by
Autor:
W. T. Moore, M. W. Denhoff, R. L . S. Devine, P. Maigné, J.-M. Baribeau, T. E. Jackman, E. V. Kornelsen, D. C. Houghton, A.J. Springthorpe, P. Mandeville
Publikováno v:
Canadian Journal of Physics. 65:904-908
The growth of GaAs on Si(100) directly and with Ge buffer layers has been carried out sequentially under ultra high vacuum conditions in a double-ended III–V and group IV molecular beam epitaxy system. These heterostructures were examined by cross-