Zobrazeno 1 - 10
of 10
pro vyhledávání: '"M. W. Bench"'
Publikováno v:
Journal of Applied Physics. 87:49-56
The damage produced in GaAs by implantation with low energy heavy ions has been studied as a function of ion mass and implantation temperature (30 and 300 K). The experiments were performed in situ in the microscope-accelerator facility at Argonne Na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725092afce3d5db8f73e1e12228e5d5c
https://doi.org/10.1063/1.371825
https://doi.org/10.1063/1.371825
Publikováno v:
Philosophical Magazine Letters. 66:39-45
A comparison has been made of the defect image contrast obtained using conventional two-beam dark-field and the bright-field down-zone techniques. It is shown that better resolution and contrast of isolated amorphous zones in GaAs and vacancy loops i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48e8b84c6226e7872b766a7a87e470cf
https://doi.org/10.1080/09500839208206011
https://doi.org/10.1080/09500839208206011
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :458-461
The damage structure produced in GaAs and AlxGa1−xAs(x = 0.85 and 0.20) by heavy-ion irradiations has been investiga using the transmission electron microscope. The irradiations and the electron microscopy were performed at 30 and 300 K in situ usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::257b49383976cea7961ec34f076557d5
https://doi.org/10.1016/0168-583x(91)95259-g
https://doi.org/10.1016/0168-583x(91)95259-g
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :372-376
The crystalline-to-amorphous transition induced by ion implantation has been investigated in GaAs and GaP using transmission electron microscopy, including experiments performed in situ and with, high-resolution TEM. Implantations have been made with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15cc6fb5fe59285c41ed2fd52814a3bf
https://doi.org/10.1016/0168-583x(91)95240-e
https://doi.org/10.1016/0168-583x(91)95240-e
Publikováno v:
Journal of Applied Physics. 69:1287-1293
The response of AlxGa1−xAs/GaAs samples to bombardment with heavy ions (50 keV Kr+, 50 keV and 1.5 MeV Xe+) was studied as a function of ion dose at temperatures of 30 and 300 K using transmission electron microscopy. Samples with x=0.2 and 0.85 we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2d348768b90e5991875de87d6dba3c
https://doi.org/10.1063/1.347262
https://doi.org/10.1063/1.347262
Publikováno v:
MRS Proceedings. 235
Isolated amorphous zones produced in GaAs, GaP, Si, and Ge by the implantation of 50 keV Kr+ or Xe+ ions have been induced to recrystallize under the influence of the electron beam in the transmission electron microscope. This effect has been investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c089dc2d19cbbbcac38fb92cc3d26a25
https://doi.org/10.1557/proc-235-27
https://doi.org/10.1557/proc-235-27
Autor:
M. W. Bench, C.B. Carter
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 52:642-643
There has been an increasing interest in recent years in the growth of epitactic oxide thin films for use in a variety of technological applications, including optical and electronic devices. A number of fundamental aspects of the growth of TiO2 film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d7f2f8b1fc41dd4b059ae0082c20315
https://doi.org/10.1017/s0424820100170943
https://doi.org/10.1017/s0424820100170943
Publikováno v:
Metallurgical Transactions A. 20:2673-2680
The High-Voltage Electron Microscope (HVEM)-Accelerator Facility at Argonne National Laboratory (ANL) has been used to gain insight into the process of collapse of displacement cascades to vacancy loops in metals (Ni, Cu, Fe, Ni-Si, and Ni-Al) and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c3c8dc988eca495d1d092e2c25dc815
https://doi.org/10.1007/bf02670160
https://doi.org/10.1007/bf02670160
Publikováno v:
MRS Proceedings. 100
Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne Nation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e997da80336063bddfc92a6a46433fb
https://doi.org/10.1557/proc-100-293
https://doi.org/10.1557/proc-100-293
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 46:460-461
Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments were undertaken to provide additional insight into the mechanisms by which individual amor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7817cab9ca44c748049883d4b9960666
https://doi.org/10.1017/s0424820100104364
https://doi.org/10.1017/s0424820100104364