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Nucleation kinetics of Si quantum dots on SiO2

Autor: C. Spinella, M. Vulpio, R. A. Puglisi, M. Bileci, Cosimo Gerardi, G. Ammendola, Giuseppe Nicotra, Salvatore Lombardo

Publikováno v: Journal of applied physics 95 (2004): 2049–2055. doi:10.1063/1.1639950
info:cnr-pdr/source/autori:Nicotra G.; Puglisi R.A.; Lombardo S.; Spinella C.; Vulpio M.; Ammendola G.; Bileci M.; Gerardi C./titolo:Nucleation kinetics of Si quantum dots on SiO2/doi:10.1063%2F1.1639950/rivista:Journal of applied physics/anno:2004/pagina_da:2049/pagina_a:2055/intervallo_pagine:2049–2055/volume:95

The formation of Si quantum dots on SiO2 by chemical vapor deposition of SiH4 has been investigated in the range from the submonolayer to the complete coverage with Si. In order to investigate the very early stages of the nucleation process of Si on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad8db216b567a2f7a7fabc0cdf7edaa5

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Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

Autor: G. Renna, Giuseppe Nicotra, M. Bileci, N. Nastasi, Isodiana Crupi, Cosimo Gerardi, M. Vulpio, Salvatore Lombardo, G. Ammendola

We have realized nanocrystal memories by using silicon quantum dots embedded in silicon dioxide. The Si dots with the size of few nanometers have been obtained by chemical vapor deposition on very thin tunnel oxides and subsequently coated with a dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86110514f84c25d1dc74b90fe9366953
http://hdl.handle.net/10447/179622

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Memory effects in single-electron nanostructures

Autor: Isodiana Crupi, M. Vulpio, Emanuele Rimini, G. Ammendola, Salvatore Lombardo, M. Melanotte, Cosimo Gerardi

Publikováno v: Diffusion and defect data, solid state data. Part B, Solid state phenomena 82-84 (2002): 669–674.
info:cnr-pdr/source/autori:Crupi I., Lombardo S., Gerardi C., Ammendola G., Vulpio M., Rimini E., Melanotte M./titolo:Memory effects in single-electron nanostructures/doi:/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2002/pagina_da:669/pagina_a:674/intervallo_pagine:669–674/volume:82-84
Scopus-Elsevier

We investigate the memory function at room temperature in devices based on quantum dots. By Low Pressure Chemical Vapour Deposition (LPCVD) we deposited Si dots embedded in SiO2. On these devices flat band voltage shifts were well detected at low wri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0d4e83761655be9ab8feb1af7785dab
http://www.cnr.it/prodotto/i/35157

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Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins

Autor: Cosimo Gerardi, G. Ammendola, Giuseppe Nicotra, N. Nastasi, Isodiana Crupi, M. Vulpio, T. Rossetti, G. Mantarro, Salvatore Lombardo

Publikováno v: Scopus-Elsevier
Gettering and Defect Engineering in Semiconductor Technology, pp. 663–668, 2002
info:cnr-pdr/source/autori:Vulpio M, Gerardi C, Lombardo S, Ammendola G, Crupi I, Rossetti T, Nastasi N, Mantarro G, Nicotra G/congresso_nome:Gettering and Defect Engineering in Semiconductor Technology/congresso_luogo:/congresso_data:2002/anno:2002/pagina_da:663/pagina_a:668/intervallo_pagine:663–668

We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72b983866a049f3b5768b4ad9f4b81e1
http://hdl.handle.net/10447/179616

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Memory effects in MOS capacitors with silicon quantum dots

Autor: Barbara Fazio, Salvatore Lombardo, Yougui Liao, Cosimo Gerardi, Isodiana Crupi, M. Vulpio, Corrado Bongiorno, M. Melanotte, Corrado Spinella

Publikováno v: Materials science & engineering. C, Biomimetic materials, sensors and systems
15 (2001): 283–285. doi:10.1016/S0928-4931(01)00220-X
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Spinella C, Gerardi C, Fazio B, Vulpio M, Melanotte M, Liao Y, Bongiorno C/titolo:Memory effects in MOS capacitors with silicon quantum dots/doi:10.1016%2FS0928-4931(01)00220-X/rivista:Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)/anno:2001/pagina_da:283/pagina_a:285/intervallo_pagine:283–285/volume:15

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::183ea95e472509103cd209296dc69049
http://hdl.handle.net/10447/179590

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Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide

Autor: C. Spinella, M. Vulpio, Cosimo Gerardi, Stefania Privitera, Corrado Bongiorno, Y. Liao, Barbara Fazio, Salvatore Lombardo, Isodiana Crupi

Publikováno v: Journal of applied physics 89 (2001): 5552–5558.
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Spinella C, Bongiorno C, Liao Y, Gerardi C, Fazio B, Vulpio M, Privitera S/titolo:Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide/doi:/rivista:Journal of applied physics/anno:2001/pagina_da:5552/pagina_a:5558/intervallo_pagine:5552–5558/volume:89

Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb9bcb7be4aac5aa8c75bdecfddec29a
http://hdl.handle.net/10447/179592

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Memory effects in MOS capacitors with silicon rich oxide insulators

Autor: Y. Liao, Salvatore Lombardo, M. Vulpio, Corrado Bongiorno, Barbara Fazio, Cosimo Gerardi, Stefania Privitera, Corrado Spinella, Isodiana Crupi

Publikováno v: Scopus-Elsevier

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials wereannealed in N2 ambient at temperatures between 950 and 1100 °C

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbf8697b1e56ec81d346bf42b5cfe053
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034428467&partnerID=MN8TOARS

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Nanocrystal MOS with silicon-rich oxide

Autor: Isodiana Crupi, Emanuele Rimini, M. Melanotte, M. Vulpio, Cosimo Gerardi, Salvatore Lombardo, Barbara Fazio

Publikováno v: Scopus-Elsevier
Gettering and Defect Engineering in Semiconductor Technology, pp. 675–680, 2002
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Gerardi C, Fazio B, Vulpio M, Rimini E, Melanotte M/congresso_nome:Gettering and Defect Engineering in Semiconductor Technology/congresso_luogo:/congresso_data:2002/anno:2002/pagina_da:675/pagina_a:680/intervallo_pagine:675–680

By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::027b7fb8db9b9bd05724ae89933784a1
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036131498&partnerID=MN8TOARS

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