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Ti/Al-based contacts to p-type SiC and GaN for power device applications

Autor: F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600357-1–1600357-7. doi:10.1002/pssa.201600357
info:cnr-pdr/source/autori:F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2/titolo:Ti%2FAl-based contacts to p-type SiC and GaN for power device applications/doi:10.1002%2Fpssa.201600357/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600357-1/pagina_a:1600357-7/intervallo_pagine:1600357-1–1600357-7/volume:214

Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::46b0334f4e76e026f90902f731890d2b

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Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices

Autor: P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600366-1–1600366-7. doi:10.1002/pssa.201600366
info:cnr-pdr/source/autori:P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1/titolo:Electrical characterization of trapping phenomena at SiO2%2FSiC and SiO2%2FGaN in MOS-based devices/doi:10.1002%2Fpssa.201600366/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600366-1/pagina_a:1600366-7/intervallo_pagine:1600366-1–1600366-7/volume:214

In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO2/SiC and SiO2/GaNsystems. In particular, time re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::e42244b78b02d9a721090b69f8a95f71

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Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process

Autor: M. Vivona 1, P. Fiorenza 1, F. Iucolano 2, A. Severino 2, S. Lorenti 2, F. Roccaforte 1

Publikováno v: Materials science forum 897 (2017): 331–334. doi:10.4028/www.scientific.net/MSF.897.331
info:cnr-pdr/source/autori:M. Vivona 1; P. Fiorenza 1; F. Iucolano 2; A. Severino 2; S. Lorenti 2; F. Roccaforte 1/titolo:Properties of SiO2%2F4H-SiC interfaces with an oxide deposited by a high-temperature process/doi:10.4028%2Fwww.scientific.net%2FMSF.897.331/rivista:Materials science forum/anno:2017/pagina_da:331/pagina_a:334/intervallo_pagine:331–334/volume:897

This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::dfdc4b6745ac4c23e3caa04fbb1a8ad1

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Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3

Autor: P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1

Publikováno v: Materials science forum 806 (2015): 143–147. doi:10.4028/www.scientific.net/MSF.806.143
info:cnr-pdr/source/autori:P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1/titolo:Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3/doi:10.4028%2Fwww.scientific.net%2FMSF.806.143/rivista:Materials science forum/anno:2015/pagina_da:143/pagina_a:147/intervallo_pagine:143–147/volume:806

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::804750875e15e43c359f713520d2c8eb
https://publications.cnr.it/doc/298575

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Processing Issues for Reliable 4H-SiC MOSFET

Autor: F. Roccaforte 1, P. Fiorenza 1, M. Vivona 1, F. Giannazzo 1, E. Zanetti 2, A. Guarnera 2, A. Frazzetto 2, S. Rascunà 2, M. Saggio 2

Publikováno v: 38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014), pp. 81–84, Delphi (Greece), 15-18 June, 2014
info:cnr-pdr/source/autori:F. Roccaforte 1, P. Fiorenza 1, M. Vivona 1, F. Giannazzo 1, E. Zanetti 2, A. Guarnera 2, A. Frazzetto 2, S. Rascunà 2, M. Saggio 2/congresso_nome:38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014)/congresso_luogo:Delphi (Greece)/congresso_data:15-18 June, 2014/anno:2014/pagina_da:81/pagina_a:84/intervallo_pagine:81–84

This paper reports on some relevant processing issues for 4H-SiC MOSFETs. In particular, the work focuses on the behavior of gate oxide and channel mobility with respect to the post-deposition treatments performed to improve the electronic quality of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::2c2aef17d3ab753fbad37f7d422cd0ad
http://www.cnr.it/prodotto/i/284904

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Influence of processing conditions on the behaviour of 4H-SiC MOSFETs

Autor: F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2

Publikováno v: 37th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2013, pp. 51–52, Warnemuende (Germany), May26th-29th, 2013
info:cnr-pdr/source/autori:F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2/congresso_nome:37th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2013/congresso_luogo:Warnemuende (Germany)/congresso_data:May26th-29th, 2013/anno:2013/pagina_da:51/pagina_a:52/intervallo_pagine:51–52

This paper reports on the influence of the processing conditions on the behaviour of 4H-SiC MOSFETs. The impact of the SiC surface morphology (i.e., processing-induced roughness) and the effects of different post-deposition-annealing (PDA) of the gat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::17f9986b3e18b0e691718c695a4aecd2
https://publications.cnr.it/doc/275326

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