Výsledky vyhledávání - "M. Vishnuwaran"

Using low-cost materials for highly efficient eco-friendly formamidinium tin iodide based solar cell with copper oxide as hole transport material and titanium oxide as electron transport material with different metal contacts

Autor: M. Vishnuwaran, K. Ramachandran, D. Anand, V. Ragavendran

Publikováno v: Ceramics International. 48:29314-29321

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65129842dcc0e9ab663526b0b5d77caf
https://doi.org/10.1016/j.ceramint.2022.05.333

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Novel approach on Formamidinium tin iodide-based Perovskite solar cell for the best replacement materials of Hole Transport Layer and Electron Transport Layer by using Solar cell Capacitance simulation

Autor: M. Vishnuwaran, Krishnamoorthy Ramachandran

Perovskite Solar Cells (PSC) research has increased noticeably in recent years as a result of significant improvements in their performance. Perovskite solar cells are a new development in Photovoltaic technology. Because PSCs are inexpensive, have t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2783e7fd32c220df4942d81c2a187a71
https://doi.org/10.21203/rs.3.rs-1265526/v1

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Using low cost materials for highly efficient eco-friendly FASnI3 based solar cell with Cu2O as HTM and TiO2 as ETM with different metal contacts

Autor: M Vishnuwaran, K Ramachandran, Priyanka Roy, Ayush khare, V Ragavendran

Perovskite materials are considered the mainstay of PV manufacturing asoutstandingto notable optoelectronic properties. In this work the act of Pb-free FASnI3 based PSC, TiO2 as ETL, and Cu2O as HTL and Ag,Au, Pt,are the different metal contact is si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf64e18505e34fc066c173cb563cead2
https://doi.org/10.22541/au.163654365.54255595/v1

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Effect of Titanium Carbide Heat Exchanger Block and Retort on Oxygen Impurities in Mc-Silicon: Numerical Modelling

Autor: P. Ramasamy, M. Vishnuwaran, Manickam Srinivasan, V. Kesavan

Publikováno v: Silicon. 12:799-803

Primarily, mc-Silicon growth is undertaken by directional solidification (DS) process. Reduction of non-metallic impurities such as oxygen, carbon and nitrogen in DS produced mc-Si ingots is a challenging task and strong contaminations come from inne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63c56b7670b5074ad386785a74007720
https://doi.org/10.1007/s12633-019-00174-w

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SCAPS simulated FASnI3 and MASnI3 based PSC solar cells: A comparison of device performance

Autor: M. Vishnuwaran, K. Ramachandran, Priyanka Roy, Ayush khare

Publikováno v: IOP Conference Series: Materials Science and Engineering. 1219:012048

In this paper, we have designed simulated, compare, and analyzed the high efficiency of FASnI3 and MASnI3 based PSC solar cell. In recent times, organic and inorganic Perovskite-based solar cells are turning to be hopeful devices due to their unique

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27ef480e287e486252c685ede1479e0d
https://doi.org/10.1088/1757-899x/1219/1/012048

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Optimization of the high-performance multi-crystalline silicon solidification process by side heater design-DS system

Autor: P. Ramasamy, V. Kesavan, M. Srinivasan, M. Vishnuwaran

Publikováno v: DAE SOLID STATE PHYSICS SYMPOSIUM 2018.

A transient global model was used to investigate the effect of heater design in the directional solidification (DS) process for multi-crystalline silicon (mc-Si) ingot growth process. Dislocation is a major case that affects the solar cell performanc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa4832cb46fa18522d3b35679513f1ba
https://doi.org/10.1063/1.5113298

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