Zobrazeno 1 - 10
of 406
pro vyhledávání: '"M. Virgilio"'
Publikováno v:
Physical Review Research, Vol 5, Iss 2, p L022035 (2023)
Quantum phases of solid-state electron systems can sustain exotic phenomena and a very rich spin physics. We utilize model-solid theory to show that Ge_{1−x}Sn_{x} alloys, an emerging group IV semiconductor, can be engineered into heterostructures
Externí odkaz:
https://doaj.org/article/a7e44c3b3c604b48b73d1cb86a2562b6
Publikováno v:
APL Photonics, Vol 7, Iss 5, Pp 050901-050901-20 (2022)
The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing
Externí odkaz:
https://doaj.org/article/b701f3cceed4457eb9c2ea0bb90b1dc7
Autor:
N. W. Hendrickx, D. P. Franke, A. Sammak, M. Kouwenhoven, D. Sabbagh, L. Yeoh, R. Li, M. L. V. Tagliaferri, M. Virgilio, G. Capellini, G. Scappucci, M. Veldhorst
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Superconductor–semiconductor hybrid systems can bring together physical properties that are promising for fast and coherent quantum technology. Here, Hendrickx et al. realize such a system in planar germanium heterostructures demonstrating excellen
Externí odkaz:
https://doaj.org/article/9bf5041bccfd40b18afd1d2182ec6e12
Autor:
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, G. Capellini
Publikováno v:
APL Materials, Vol 6, Iss 7, Pp 076108-076108-10 (2018)
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples
Externí odkaz:
https://doaj.org/article/48abe2f532214873b887f1227b697201
Autor:
D. Peschka, M. Thomas, A. Glitzky, R. Nurnberg, K. Gartner, M. Virgilio, S. Guha, Th. Schroeder, G. Capellini, Th. Koprucki
Publikováno v:
IEEE Photonics Journal, Vol 7, Iss 3, Pp 1-15 (2015)
In this paper, we present a thorough modeling of an edge-emitting laser based on strained germanium (Ge) microstrips. The full-band structure of the tensile strained Ge layer enters the calculation of optical properties. Material gain for strained Ge
Externí odkaz:
https://doaj.org/article/1ec1596dc539478e84769235bceb498e
Publikováno v:
ChemCatChem. 15
Akademický článek
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Publikováno v:
Reaction Chemistry & Engineering. 7:1997-2008
Easily prepared SiO2–Al2O3-supported Rh and Pd-based catalysts exhibit high activity and selectivity in the pentyl valerate production in liquid phase from γ-valerolactone, pentanol and H2, reaching the highest reported productivity.
Publikováno v:
ChemCatChem. 13:3889-3906
Akademický článek
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