Zobrazeno 1 - 10
of 34
pro vyhledávání: '"M. Van der Donck"'
Publikováno v:
Physical review B
In the Comment, the authors state that the separation of the relative and center of mass variables in our work is not correct. Here we point out that there is a typographical error, i.e., ${q}_{i}$ instead of $\ensuremath{-}e$, in two of our equation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6e4baf0b7289a9b278f4b5c41bdae96
https://doi.org/10.1103/physrevb.101.127402
https://doi.org/10.1103/physrevb.101.127402
Publikováno v:
Physical review B
The hunt for high-temperature superfluidity has received new impetus from the discovery of atomically thin stable materials. Electron-hole superfluidity in coupled ${\mathrm{MoSe}}_{2}\ensuremath{-}{\mathrm{WSe}}_{2}$ monolayers is investigated using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c3b59b592f6711ec59d6ce3e24d5501
https://hdl.handle.net/10067/1702010151162165141
https://hdl.handle.net/10067/1702010151162165141
Autor:
M. Van der Donck, François M. Peeters
Publikováno v:
Physical review B
A four-band exciton Hamiltonian is constructed starting from the single-particle Dirac Hamiltonian for charge carriers in monolayer transition metal dichalcogenides (TMDs). The angular part of the exciton wave function can be separated from the radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::449d6b0e55851d30908483b2de5266d9
http://arxiv.org/abs/1903.11950
http://arxiv.org/abs/1903.11950
Autor:
David Neilson, M. Van der Donck, Alex R. Hamilton, Bart Partoens, A. Perali, Sara Conti, François M. Peeters
Publikováno v:
Physical review B
Although there is strong theoretical and experimental evidence for electron-hole superfluidity in separated sheets of electrons and holes at low $T$, extending superfluidity to high $T$ is limited by strong 2D fluctuations and Kosterlitz-Thouless eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fa353e3ce2d25285e5e4abcf9319b9a
Autor:
M. Van der Donck, François M. Peeters
Publikováno v:
Physical review B
The effect of anisotropy in the energy spectrum on the binding energy and structural properties of excitons, trions, and biexcitons is investigated. To this end we employ the stochastic variational method with a correlated Gaussian basis. We present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65256a13ca2ed714116b932693e5a568
http://arxiv.org/abs/1812.01321
http://arxiv.org/abs/1812.01321
Publikováno v:
Physical review B
The magnetopolaron effect on shallow-impurity states in semiconductors is investigated when subjected simultaneously to a magnetic field and an intense terahertz laser field within the Faraday configuration. We use a time-dependent nonperturbative th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c54d57cd0d2807747b2580204fc1f17
https://doi.org/10.1103/physrevb.97.064108
https://doi.org/10.1103/physrevb.97.064108
Autor:
François M. Peeters, M. Van der Donck
Publikováno v:
Physical review B
Starting from the single-particle Dirac Hamiltonian for charge carriers in monolayer transition metal dichalcogenides (TMDs), we construct a four-band Hamiltonian describing interlayer excitons consisting of an electron in one TMD layer and a hole in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3dfbb436b6d3760566bd5bb4b5246e1
Publikováno v:
Physical review B
The influence of a perpendicular magnetic field on the binding energy and structural properties of excitons, trions, and biexcitons in monolayers of semiconducting transition metal dichalcogenides (TMDs) is investigated. The stochastic variational me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9016a27d717b8a34d83f95818f0bf49e
https://hdl.handle.net/10067/1515210151162165141
https://hdl.handle.net/10067/1515210151162165141
Publikováno v:
Applied physics letters
Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine charge carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d828723af1875ca00b75be676ee1f9ca
Autor:
François M. Peeters, M. Van der Donck
Publikováno v:
Physical review B
We use a variational technique to study the many-body phase diagram of electrons and holes in $n$-doped and $p$-doped monolayer transition metal dichalcogenides (TMDs). We find a total of four different phases. $i$) A fully spin polarized and valley
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cb0721e3f6c9745a7f1ccc1b9d9613a
https://hdl.handle.net/10067/1536220151162165141
https://hdl.handle.net/10067/1536220151162165141