Zobrazeno 1 - 10
of 56
pro vyhledávání: '"M. Vaille"'
Autor:
J. Guillermin, Athina Varotsou, M. Vaille, N. Sukhaseum, Christian Poivey, Jean-Charles Thomas, N. Chatry, A. Privat, P. Garcia
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Process-induced variability between parts and lots is a critical issue for space applications and Radiation Hardness Assurance (RHA). The one-sided tolerance limit method is commonly used to take this variability into account. This study explores the
Autor:
T. Riemann, Bernard Beaumont, Eric Feltin, M. Vaille, P. Vennéguès, Béla Pécz, Jürgen Christen, L. Dobos, Pierre Gibart
Publikováno v:
Journal of Applied Physics. 93:182-185
Completely coalesced epitaxial lateral overgrowth (ELO) of GaN on silicon (111) is presented for ELO layer thicknesses below 3 μm. Fast lateral expansion of the ELO-GaN was achieved by metalorganic vapor phase epitaxy at high growth temperature (112
Autor:
S. Dalmasso, M. Vaille, Bernard Beaumont, Pierre Gibart, H. P. D. Schenk, Mathieu Leroux, P. de Mierry, J.-M. Bethoux, Eric Feltin
Publikováno v:
physica status solidi (a). 192:335-340
A RCLED structure, composed of InGaN multi-quantum wells inserted in a 3λ GaN based micro-cavity, was grown by metalorganic vapor phase epitaxy. The bottom mirror was a GaN/AIGaN distributed Bragg reflector (DBR). The growth process was followed by
Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy
Autor:
Fernando Calle, P. de Mierry, Bernard Beaumont, Pierre Gibart, Eric Feltin, M. Vaille, M. Laügt, O. Tottereau, H. P. D. Schenk, Philippe Vennéguès, Susana Fernández
Publikováno v:
physica status solidi (a). 188:899-903
A series of selective (Al,Ga)N quarter-wave reflectors has been grown on sapphire and silicon substrates by metalorganic vapor phase epitaxy. The microstructure of the mirror structures, consisting of GaN quarter-wave layers alternating with AlN, AlG
Publikováno v:
Journal of Applied Physics. 87:4175-4181
A transmission electron microscopy study of the reduction mechanisms for defect densities in epitaxial lateral overgrown (ELO) GaN films is presented. In the standard one step ELO, the propagation of defects under the mask is blocked, whereas the def
Publikováno v:
Diamond and Related Materials. 9:452-455
We have studied the growth mechanisms of GaN and AlGaN layers with low aluminium incorporation (
Publikováno v:
Journal of Applied Physics. 87:577-583
The growth of GaN on 6H–SiC is three dimensional (3D) and results in the formation of large islands presenting hexagonal truncated shape with {1–101} lateral facets and a top {0001} facet. In this work, we present a three steps growth process tha
Publikováno v:
Semiconductor Science and Technology. 14:L33-L36
The metal-organic vapour phase epitaxy (MOVPE) growth of GaN on 6H-SiC with a conductive AlGaN buffer layer has been studied. With only 6% Al incorporation, a continuous 200 nm thick AlGaN layer n-type doped in the 1018 cm-3 range was obtained. A cra
Publikováno v:
physica status solidi (a). 176:109-112
GaN epilayers about 600 nm thick were grown directly on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE) with a three-step process. A thin GaN nucleation layer grown at 1080 °C, initially 3D, is smoothed in several minutes under ammonia flux whe
Publikováno v:
physica status solidi (b). 216:691-695