Výsledky vyhledávání - "M. V. Zverkov"

Double integrated laser-thyristor

Autor: A. V. Lobintsov, A A Padalitsa, Sergey O. Slipchenko, S. M. Sapozhnikov, Nikita A. Pikhtin, V P Konyaev, A. I. Danilov, A. A. Marmalyuk, T. A. Bagaev, Yu V Kurnyavko, V. A. Simakov, A. A. Podoskin, V V Krichevskii, M. V. Zverkov, Maxim A. Ladugin

Publikováno v: Quantum Electronics. 49:1011-1013

Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::72b4cfc7c8528dda01ed5c4091e2c102
https://doi.org/10.1070/qel17104

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Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

Autor: T. A. Bagaev, A. A. Padalitsa, V. V. Krichevsky, S. M. Sapozhnikov, M. V. Zverkov, V. A. Simakov, Maxim A. Ladugin, A. A. Marmalyuk, V P Konyaev

Publikováno v: Semiconductors. 48:99-103

The results of studying single laser diodes and arrays in the spectral range of 900–1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1b63d1a704cecfb5b8ebdf8198b4d98
https://doi.org/10.1134/s1063782614010175

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High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength

Autor: Aleksandr A Marmalyuk, V. A. Simakov, T. A. Bagaev, M. V. Zverkov, Sergey O. Slipchenko, Nikita A. Pikhtin, V P Konyaev, A. A. Padalitsa, Maxim A. Ladugin, I. S. Tarasov, Yuriy V. Kurniavko, Aleksandr A. Podoskin, A. V. Rozhkov

Publikováno v: IEEE Photonics Technology Letters. 25:1664-1667

High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f25e7bc8f19d0e233fa259822ecec50
https://doi.org/10.1109/lpt.2013.2272801

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Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

Autor: M. V. Zverkov, M. A. Ladugin, V. A. Simakov, V. V. Krichevsky, S. M. Sapozhnikov, I. S. Tarasov, Nikita A. Pikhtin, I. V. Yarotskaya, V. P. Konyaev, M. B. Uspenskiy, A. A. Marmalyuk, Evgeniya I Davydova, E I Lebedeva, S V Petrov

Publikováno v: Semiconductors. 45:519-525

The results of a series of studies concerned with formation of epitaxially integrated InGaAs/AlGaAs and AlGaAs/AlGaAs heterostructures with several emitting regions and with investigation of properties of laser diodes based on the above structures op

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c108e003a8d728db0add9866f19bdf21
https://doi.org/10.1134/s1063782611040154

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On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

Publikováno v: Semiconductors. 48:697-699

A high power laser-thyristor structure providing low current-related and optical losses is developed. The possibility of controlling the lasing turn-on delay time of the laser thyristor in the 8–2600 ns range is demonstrated. The minimum values of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7462f3eabd5711848733308c8e72d697
https://doi.org/10.1134/s1063782614050224

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High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

Autor: V P Konyaev, V V Krichevskii, Evgeniya I Davydova, V. A. Simakov, A A Padalitsa, M. V. Zverkov, Maxim A. Ladugin, A V Sukharev, Aleksandr A Marmalyuk, Mikhail B Uspenskii

Publikováno v: Quantum Electronics. 39:723-726

Ternary vertically integrated lasers based on the InGaAs/AlGaAs/GaAs heterostructure grown by the method of MOS hydride epitaxy in a single epitaxial process are studied. The typical slope of the watt—ampere characteristic for a triple laser diode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0154d0f459a063d83678524d6cd7a718
https://doi.org/10.1070/qe2009v039n08abeh014181

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Double integrated nanostructures for pulsed 0.9-μm laser diodes

Autor: V. A. Simakov, A V Sukharev, V V Krichevskii, M. V. Zverkov, Maxim A. Ladugin, Aleksandr A Marmalyuk, V P Konyaev, A A Padalitsa

Publikováno v: Quantum Electronics. 38:989-992

Double integrated laser InGaAs/GaAs/AlGaAs heterostructures grown by the method of metal-organic vapor phase epitaxy (MOVPE) in a single epitaxial process are studied. Typical slopes of the watt—ampere characteristic for a single laser diode were 1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4753b778d28472d609a9ac9411493faa
https://doi.org/10.1070/qe2008v038n11abeh013946

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Epitaxially intergrated power efficient switch for high power laser pulse generation in semiconductor heterostructures of 900 nm wavelength

Autor: A. A. Padalitsa, Nikita A. Pikhtin, Y. V. Kurniavko, M. A. Ladugin, V. A. Simakov, T. A. Bagaev, Sergey O. Slipchenko, A. A. Marmalyuk, V. P. Konyaev, A. V. Rozhkov, A. A. Podoskin, I. S. Tarasov, M. V. Zverkov

Publikováno v: 2014 International Conference Laser Optics.

New type of high power laser pulse generator of ns-range duration based on epitaxial intergration of laser heterostructure into thyristor heterostructure has been investigated. Generation of laser pulse of 28W amplitude is done by applying a control

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e37978c2e1cccdac1e7cd9027c225e48
https://doi.org/10.1109/lo.2014.6886288

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Emission of optically coupled semiconductor lasers

Autor: M V Zverkov, K B Dedushenko, P V Borisov, Yurii A Bykovskii

Publikováno v: Quantum Electronics. 30:867-872

The emission characteristics of a system consisting of two coherently coupled semiconductor lasers are studied. It is found that different lasing regimes are realised in the system depending on its parameters. In the case of strong coupling, deep sto

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e18390de0ee1084c16d8a86e161e6098
https://doi.org/10.1070/qe2000v030n10abeh001838

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