Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M. V. Zeller"'
Publikováno v:
Langmuir. 11:127-135
The adsorption and thermal decomposition of a model polypernuorinated ether on high surface area Al 2 O 3 has been studied using transmission infrared spectroscopy. It has been found that (C 2 F 5 ) 2 O interacts with the isolated OH groups on the Al
Publikováno v:
Journal of The Electrochemical Society. 137:221-225
Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-v
Publikováno v:
ChemInform. 21
Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-v
Autor:
M. V. Zeller, S. J. Hahn
Publikováno v:
Surface and Interface Analysis. 11:327-334
X-ray photoelectron spectroscopy was used to track chemical structure changes in conducting polypyrrole films which were electrochemically grown at various current densities. The film structures were correlated to changes in the film electrical condu
Publikováno v:
Surface and Interface Analysis. 3:211-225
Quantitative information from electron spectroscopy for chemical analysis requires the use of suitable atomic sensitivity factors. An empirical set has been developed, based upon data from 135 compounds of 62 elements. Data upon which the factors are
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:1692-1695
Several surface modificaation techniques were performed in situ in an ultrahigh vacuum as part of a program to develop electrical contacts on the (100) face of cubic SiC. The Auger electron spectroscopy line shapes and peak-to-peak heights of the Si
Publikováno v:
Inorganic Chemistry. 12:1431-1433
Publikováno v:
MRS Proceedings. 97
After Nichrome, Ni, Cr, and Au/Ta films are deposited onto single crystals of cubic SiC, their reactivities at the metal-semiconductor interface are studied by Auger Electron Spectroscopy. For all metals except Ni, metal carbides are detected at the
Autor:
M. V. Zeller, J. J. Bellina
Publikováno v:
MRS Proceedings. 97
The reaction of thin Ti films deposited, in situ, onto (100) 3C-SiC has been studied by Auger Electron Spectroscopy, and Low Energy Electron Diffraction. The effects of reaction temperature and SiC surface condition were investigated as part of a pro
Autor:
J. J. Bellina, M. V. Zeller
Publikováno v:
Amorphous and Crystalline Silicon Carbide and Related Materials ISBN: 9783642934087
Amorphous and Crystalline Silicon Carbide and Related Materials
Amorphous and Crystalline Silicon Carbide and Related Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf54de7bf5f1c6a4c49c95b1c7bb82d
https://doi.org/10.1007/978-3-642-93406-3_19
https://doi.org/10.1007/978-3-642-93406-3_19