Zobrazeno 1 - 10
of 19
pro vyhledávání: '"M. V. Vuychik"'
Autor:
Ts. A. Kryskov, M. P. Kisselyuk, O. S. Litvin, I. V. Kruglenko, M. S. Zayats, O. I. Vlasenko, M. V. Vuychik, P. O. Gentsar
Publikováno v:
Semiconductors. 44:1012-1015
Morphological and optical studies (ellipsometry and reflectance spectroscopy in the ranges 400–750 nm and 1.4–25 μm) of thin GaSe films fabricated by thermal evaporation on the n-Si (111) single-crystal substrates are reported. The film thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7bc8426becef1667b3242dc46e391ab
https://doi.org/10.1134/s1063782610080099
https://doi.org/10.1134/s1063782610080099
Autor:
A. V. Stronski, M. V. Vuychik, V. G. Boiko, N. S. Zayats, P. O. Gentsar, O. S. Litvin, I.B. Yanchuk
Publikováno v:
Semiconductors. 43:590-593
Morphological and optical studies of the Si-doped GaN films (doping level NSi = 1.5 × 1019 cm−3) grown by vapor-phase epitaxy from metalorganic compounds on a sapphire substrate oriented along the c axis are conducted. For the grown GaN films, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98383d57d910c3ee6cb02e05e9fdeab3
https://doi.org/10.1134/s106378260905008x
https://doi.org/10.1134/s106378260905008x
Autor:
M. Ya. Valakh, A. A. Toropov, M. P. Lisitsa, Sergei Ivanov, M. V. Vuychik, T. V. Shubina, V. V. Strelchuk, P. S. Kop’ev
Publikováno v:
Semiconductors. 37:1336-1341
The low-temperature photoluminescence and Raman scattering in CdSe/ZnSe nanostructures with individual CdSe inserts of 1.5 and 3.0 monolayers in nominal thickness were studied. The energy position of the photoluminescene band is governed by interdiff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1defe0cfc3797935b04cc1bbd2f24834
https://doi.org/10.1134/1.1626220
https://doi.org/10.1134/1.1626220
Autor:
G. N. Semenova, V. V. Strelchuk, Yu. G. Sadofyev, V. V. Artamonov, M. V. Vuychik, M. Ya. Valakh, L. V. Borkovska, N.O. Korsunska
Publikováno v:
Materials Science and Engineering: B. 101:255-258
An efficient anti-Stokes photoluminescence (ASPL) in multistacked CdSe/ZnSe nanostructures with quantum dots (QDs) has been found under the excitation below the QD ground states. An efficiency of ASPL is a few percents of the Stokes one. The dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed2cac25a4b416dfa820d4b3dccc336
https://doi.org/10.1016/s0921-5107(02)00674-8
https://doi.org/10.1016/s0921-5107(02)00674-8
Autor:
M. Ya. Valakh, V. V. Strelchuk, Yu. G. Sadofyev, G. N. Semenova, N. Korsunska, M. V. Vuychik, E. F. Venger, L. V. Borkovska
Publikováno v:
Journal of Physical Studies. 7:456-460
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74d07be2c99cd6047ae2a55373c8a536
https://doi.org/10.30970/jps.07.456
https://doi.org/10.30970/jps.07.456
Autor:
Petr S. Kop'ev, T. V. Shubina, Mikhail Ya. Valakh, Sergei Ivanov, V. V. Strelchuk, M. V. Vuychik
Publikováno v:
SPIE Proceedings.
The intensive up-conversion photoluminescence (UPL) was observed at low temperatures in CdSe/ZnSe structures with single CdSe inserts of a nominal thickness of 1.5 and 0.6 ML. The quadratic-like dependence of UPL intensity on the excitation power was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7652c5567ae0b4f6483a0ce369a0ce0d
https://doi.org/10.1117/12.511505
https://doi.org/10.1117/12.511505
Autor:
G. N. Semenova, Yu. G. Sadofyev, M. V. Vuychik, N.O. Korsunska, M. Sharibaev, L. V. Borkovska, M. Ya. Valakh, Viktor Strelchuk
CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different parts of heterostructure (i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6742234190d34b12971671b2f494d99c
http://dspace.nbuv.gov.ua/handle/123456789/121242
http://dspace.nbuv.gov.ua/handle/123456789/121242
Autor:
M. Ya. Valakh, G. N. Semenova, M. V. Vuychik, E. F. Venger, L. V. Borkovska, Yu. G. Sadofyev, V. V. Strelchuk, N. Korsunska
Publikováno v:
ResearcherID
This paper presents the results of photoluminescence and Raman scattering investigations of CdSe/ZnSe nanostructures. Using resonant excitation of Cd-containing nanoislands both Stokes and anti-Stokes emission are observed. The mechanism of anti-Stok
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92c139074346f9bfc4b4191c0ec0af1f
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037391472&partnerID=40&md5=12d431a10e689ee128ff7e0d6afa1fbf
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037391472&partnerID=40&md5=12d431a10e689ee128ff7e0d6afa1fbf
Autor:
Strelchuk, V. V.1 Strelch@isp.kiev.ua, Kladko, V. P.1, Avramenko, E. A.1, Kolomys, O. F.1, Safryuk, N. V.1, Konakova, R. V.1, Yavich, B. S.2 byavich@soptel.ru, Valakh, M. Ya.1, Machulin, V. F.1, Belyaev, A. E.1
Publikováno v:
Semiconductors. Sep2010, Vol. 44 Issue 9, p1199-1210. 12p. 1 Diagram, 1 Chart, 7 Graphs.
Autor:
Zayats, N. S.1, Gentsar, P. O.1 gentsar@isp.kiev.ua, Boiko, V. G.1, Litvin, O. S.1, Vuychik, M. V.1, Stronski, A. V.1, Yanchuk, I. B.1
Publikováno v:
Semiconductors. May2009, Vol. 43 Issue 5, p590-593. 4p. 5 Graphs.