Zobrazeno 1 - 10
of 36
pro vyhledávání: '"M. V. Ved'"'
Autor:
V. P. Lesnikov, M. V. Ved’, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kryukov
Publikováno v:
Physics of the Solid State. 63:1028-1035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d55108c3663b7692a65a83f29378a7
https://doi.org/10.1134/s1063783421070131
https://doi.org/10.1134/s1063783421070131
Autor:
O. V. Vikhrova, Yu. A. Danilov, Fernando Iikawa, P. B. Demina, M. A. G. Balanta, Yu. M. Kuznetsov, M. V. Dorokhin, M. V. Ved
Publikováno v:
Semiconductors. 54:1341-1346
The results of studies of the time-resolved photoluminescence in semiconductor heterostructures containing two noninteracting InGaAs quantum wells in a GaAs matrix are reported. One of the quantum wells was undoped, and the other was uniformly doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d7490168128257780f80c7abaf08df4
https://doi.org/10.1134/s1063782620100061
https://doi.org/10.1134/s1063782620100061
Autor:
A. M. Andreev, Pavel A. Yunin, V. A. Kovalskiy, M. N. Drozdov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, N. V. Dikareva, O. V. Vikhrova, R. N. Kriukov, A. V. Kudrin, M. V. Ved
Publikováno v:
Semiconductors. 54:1059-1063
The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500°C; in this case, the growth rate of carbon layers is 0.19 nm s–1. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40d47be2a279ff96389ed6a488d185c
https://doi.org/10.1134/s1063782620090079
https://doi.org/10.1134/s1063782620090079
Autor:
V.E. Milin, Yu. V. Usov, Yu. A. Danilov, P. B. Demina, M. V. Ved, M. V. Dorokhin, D. A. Pavlov, A. V. Kudrin, V. P. Lesnikov, A. V. Zdoroveishchev
Publikováno v:
Technical Physics Letters. 46:691-694
The possibility of using a diluted magnetic semiconductor (In, Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. The luminescent characteristics, as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb4a0b851a32976beb532456b862ab7
https://doi.org/10.1134/s1063785020070299
https://doi.org/10.1134/s1063785020070299
Publikováno v:
Technical Physics Letters. 46:87-90
Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-〈Mn〉 heterostructures has been studied. It is established that the degree of circular polarization weakly depends on spatial separation of the active region and magnetic l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1c855ed62edf3aac0851b458450bb3
https://doi.org/10.1134/s1063785020010204
https://doi.org/10.1134/s1063785020010204
Autor:
M V, Dorokhin, O V, Vikhrova, P B, Demina, I L, Kalentyeva, P S, Vergeles, E B, Yakimov, V P, Lesnikov, B N, Zvonkov, M V, Ved, Yu A, Danilov, A V, Zdoroveyshchev
Publikováno v:
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 179
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::03b54e118dcc2d2163d234d2ddf61c40
https://pubmed.ncbi.nlm.nih.gov/34814010
https://pubmed.ncbi.nlm.nih.gov/34814010
Autor:
Anton Zdoroveishchev, Dmitry Prokhorov, V. G. Shengurov, Dmitry Filatov, Vladimir Trushin, Andrei Zaitsev, A. V. Kudrin, Vadim Chalkov, S. A. Denisov, M. V. Ved, M. V. Dorokhin, Yuri Buzynin
Publikováno v:
Materials Science in Semiconductor Processing. 100:175-178
The conditions for obtaining high-quality heavily doped epitaxial Ge:P/Si(001) epitaxial layers by hot wire chemical vapor deposition were determined. The thermal decomposition of GaP was employed to provide the source of P. Extremely high electron c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3243561bfb71f225eec615b459d54e6
https://doi.org/10.1016/j.mssp.2019.05.005
https://doi.org/10.1016/j.mssp.2019.05.005
Autor:
N. A. Baidakova, D. O. Filatov, A. V. Zdoroveishev, D. S. Prokhorov, M. V. Dorokhin, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Ved, A. V. Zaitsev
Publikováno v:
Semiconductors. 53:1262-1265
The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 1020 cm–3 from a source based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d15e8f5f3ce617df541bfa0361f74e0
https://doi.org/10.1134/s1063782619090161
https://doi.org/10.1134/s1063782619090161
Autor:
M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, A. V. Zdoroveishchev, Yu. A. Danilov, Yu. V. Usov, P. B. Demina, A. V. Kudrin, M. V. Ved
Publikováno v:
Technical Physics Letters. 45:668-671
The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22055842c236f170fbcdd54ad9928899
https://doi.org/10.1134/s1063785019070149
https://doi.org/10.1134/s1063785019070149
Autor:
N. Yu. Tabachkova, I. V. Erofeeva, Maksim Boldin, M. V. Ved, M. V. Dorokhin, Yu. M. Kuznetsov, A. V. Boryakov, P. B. Demina, Eugene B. Yakimov, V. N. Trushin, O. V. Vikhrova, Aleksey Nezhdanov, E. A. Lantsev, V. A. Gavva, A. A. Popov
Publikováno v:
RSC Advances. 9:16746-16753
A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique. Structural investigations revealed that this material has the composition of ∼14 nm core Si granules inside an SiO2 shell.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf45e936eac8b4c30337b3f035f3449f
https://doi.org/10.1039/c9ra01130g
https://doi.org/10.1039/c9ra01130g