Zobrazeno 1 - 10
of 183
pro vyhledávání: '"M. V. Ved'"'
Autor:
V. P. Lesnikov, M. V. Ved’, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kryukov
Publikováno v:
Physics of the Solid State. 63:1028-1035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d55108c3663b7692a65a83f29378a7
https://doi.org/10.1134/s1063783421070131
https://doi.org/10.1134/s1063783421070131
Autor:
O. V. Vikhrova, Yu. A. Danilov, Fernando Iikawa, P. B. Demina, M. A. G. Balanta, Yu. M. Kuznetsov, M. V. Dorokhin, M. V. Ved
Publikováno v:
Semiconductors. 54:1341-1346
The results of studies of the time-resolved photoluminescence in semiconductor heterostructures containing two noninteracting InGaAs quantum wells in a GaAs matrix are reported. One of the quantum wells was undoped, and the other was uniformly doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d7490168128257780f80c7abaf08df4
https://doi.org/10.1134/s1063782620100061
https://doi.org/10.1134/s1063782620100061
Autor:
A. M. Andreev, Pavel A. Yunin, V. A. Kovalskiy, M. N. Drozdov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, N. V. Dikareva, O. V. Vikhrova, R. N. Kriukov, A. V. Kudrin, M. V. Ved
Publikováno v:
Semiconductors. 54:1059-1063
The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500°C; in this case, the growth rate of carbon layers is 0.19 nm s–1. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40d47be2a279ff96389ed6a488d185c
https://doi.org/10.1134/s1063782620090079
https://doi.org/10.1134/s1063782620090079
Autor:
V.E. Milin, Yu. V. Usov, Yu. A. Danilov, P. B. Demina, M. V. Ved, M. V. Dorokhin, D. A. Pavlov, A. V. Kudrin, V. P. Lesnikov, A. V. Zdoroveishchev
Publikováno v:
Technical Physics Letters. 46:691-694
The possibility of using a diluted magnetic semiconductor (In, Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. The luminescent characteristics, as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb4a0b851a32976beb532456b862ab7
https://doi.org/10.1134/s1063785020070299
https://doi.org/10.1134/s1063785020070299
Publikováno v:
Technical Physics Letters. 46:87-90
Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-〈Mn〉 heterostructures has been studied. It is established that the degree of circular polarization weakly depends on spatial separation of the active region and magnetic l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1c855ed62edf3aac0851b458450bb3
https://doi.org/10.1134/s1063785020010204
https://doi.org/10.1134/s1063785020010204
Autor:
M V, Dorokhin, O V, Vikhrova, P B, Demina, I L, Kalentyeva, P S, Vergeles, E B, Yakimov, V P, Lesnikov, B N, Zvonkov, M V, Ved, Yu A, Danilov, A V, Zdoroveyshchev
Publikováno v:
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 179
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::03b54e118dcc2d2163d234d2ddf61c40
https://pubmed.ncbi.nlm.nih.gov/34814010
https://pubmed.ncbi.nlm.nih.gov/34814010