Výsledky vyhledávání - "M. V. Stepushkin"

Study of the Transport Properties and Domain Structure of Thin CoPt Films Obtained by Electron Evaporation

Autor: M. P. Temiryazeva, E. N. Mirgorodskaya, M. V. Stepushkin, I. L. Kalentieva, A. G. Temiryazev, V. E. Sizov, A. V. Zdoroveishchev

Publikováno v: Journal of Communications Technology and Electronics. 66:868-872

—CoPt films obtained by electron beam evaporation with deposition of ten Co and Pt bilayers with a total thickness of 8 nm are experimentally investigated. The Hall effect and longitudinal magnetoresistance measurements were carried out with a temp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40f7697bb762409cf6161b51706712cf
https://doi.org/10.1134/s1064226921070111

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The Role of Piezoeffect in Anomalous Dependence of the Conductivity of AlGaAs/GaAs Heterostructure with a Two-Dimensional Electron Gas on the Distance between Contacts

Autor: V. E. Sizov, M. V. Stepushkin

Publikováno v: Technical Physics Letters. 46:69-72

The electric conductivity of the AlGaAs/GaAs heterostructure with two-dimensional electron gas has been experimentally studied in a temperature range of 10–300 K. At low temperatures, electric resistance of the structure exhibited growth when the d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f4629ff8372cf6fa1655e01d75f4018
https://doi.org/10.1134/s1063785020010290

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Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas

Autor: S. P. Kurochka, V. I. Borisov, M. V. Stepushkin

Publikováno v: Russian Microelectronics. 46:600-607

The literature concerning the features of creating ohmic contacts for GaAs/AlGaAs heterostructures with a two-dimensional (2D) electron gas with a high level of electron mobility is analyzed. The process of annealing the contacts based on the Ni/Au/G

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e20f35a134f6780ec799aedc66668c10
https://doi.org/10.1134/s106373971708011x

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Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography

Autor: M. V. Stepushkin, V. I. Borisov, S. P. Kurochka, V. E. Sizov, A. G. Temiryazev, N. A. Kuvshinova

Publikováno v: Semiconductors. 51:1481-1484

Quasi-one-dimensional semiconductor structures with a variable longitudinal potential profile are fabricated by pulse power nanolithography, which is carried out using an atomic force microscope. Structures are fabricated on the basis of AlGaAs/GaAs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a5008cc741e462cd1b84f51a41db1e3
https://doi.org/10.1134/s1063782617110082

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Specifics of fabrication of Ohmic contacts to AlGaAs/GaAs heterostructures with a 2D electron gas

Autor: M. V. Stepushkin, S. P. Kurochka, V. I. Borisov

Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 19:271-278

This paper reviews the literature concerning the specifics of creating Ohmic contacts to AlGaAs/GaAs heterostructures with a 2D electron gas with high electron mobility. The process of annealing the contacts based of the Ni/Au/Ge system is considered

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6dfe50c581095c1e8ecb2c3ca148b806
https://doi.org/10.17073/1609-3577-2016-4-271-278

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