Zobrazeno 1 - 10
of 91
pro vyhledávání: '"M. V. Stepikhova"'
Autor:
M. V. Rudenko, N. V. Gaponenko, E. B. Chubenko, E. I. Lashkovskaya, K. V. Shustsikava, Yu. V. Radyush, V. D. Zhivulko, A. V. Mudryi, M. Wang, E. V. Monaico, M. V. Stepikhova, A. N. Yablonskiy
Publikováno v:
Journal of Advanced Dielectrics, Vol 12, Iss 02 (2022)
Erbium-doped barium titanate (BaTiO3:Er) xerogel film with a thickness of about 500 nm was formed on the porous strontium titanate ([Formula: see text] xerogel film on Si substrate after annealing at 800[Formula: see text]C or 900[Formula: see text]C
Externí odkaz:
https://doaj.org/article/16e02784eadd40f097071ed9e570324a
Autor:
N. V. Gaponenko, L. V. Sudnik, P. A. Vityaz, A. R. Luchаnok, M. V. Stepikhova, A. N. Yablonskiy, E. I. Lashkovskaya, K. V. Shustsikava, Yu. V. Radyush, V. D. Zhivulko, А. V. Mudryi, N. M. Kazuchits, M. S. Rusetsky
Publikováno v:
Journal of Applied Spectroscopy. 89:184-190
Исследована фото- и катодолюминесценция видимого диапазона в легированных эрбием ксерогелях титаната бария, полученных в виде порошка
Autor:
Zh. V. Smagina, V. A. Zinovyev, M. V. Stepikhova, A. V. Peretokin, S. A. Dyakov, E. E. Rodyakina, A. V. Novikov, A. V. Dvurechenskii
Publikováno v:
Semiconductors. 56:101-106
Autor:
N. V. Gaponenko, Yu. D. Karnilava, E. I. Lashkovskaya, V. D. Zhivulko, A. V. Mudryi, Yu. V. Radyush, B. A. Andreev, M. V. Stepikhova, A. N. Yablonskiy, S. A. Gusev, R. Subasri, D. S. Reddy
Publikováno v:
Semiconductors. 55:735-740
Autor:
M. V. Stepikhova, Sergey M. Sergeev, Mikhail Shaleev, A. V. Novikov, Artem N. Yablonskiy, N. A. Baidakova, Z. F. Krasilnik
Publikováno v:
Semiconductors. 54:1352-1359
The results of studies of the spectral and kinetic characteristics of the photoluminescence of photonic crystals formed on the basis of structures with self-assembled Ge(Si) nanoislands are reported. The experimentally observed enhancement of the pho
Autor:
Vladimir Zinovyev, Zh. V. Smagina, M. V. Stepikhova, S. A. Gusev, A. V. Dvurechenskii, E. E. Rodyakina, A. V. Novikov, Sergey M. Sergeev, Mikhail Shaleev, A. V. Peretokin, A. V. Nenashev, P. A. Kuchinskaya
Publikováno v:
Semiconductors. 54:853-859
The luminescence properties of arrays of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups, including those embedded in two-dimensional photonic crystals, are studied. It is shown that the incorporation of an array of orde
Autor:
Sergey A. Dyakov, Sergey M. Sergeev, D. E. Utkin, Z. F. Krasilnik, A. V. Novikov, D. V. Yurasov, M. V. Stepikhova, Artem N. Yablonskiy
Publikováno v:
Semiconductors. 54:975-981
The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence re
Autor:
S. A. Gusev, M. V. Stepikhova, B. I. Fomin, Zn. V. Smagina, A. V. Dvurechenskii, E. E. Rodyakina, Vladimir Zinovyev, A. V. Novikov, Artem N. Yablonskiy
Publikováno v:
Semiconductors. 53:1329-1333
Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a subst
Autor:
Sergei G. Tikhodeev, A. V. Novikov, Andrey Bogdanov, Artem N. Yablonskiy, M. V. Stepikhova, Sergey A. Dyakov, Z. F. Krasilnik, Nikolay A. Gippius, D. V. Yurasov
Publikováno v:
2021 IEEE Photonics Conference (IPC).
Germanium quantum dots are promising but their photoluminescence intensity is still insufficient for practical applications. It is demonstrated that their PL in silicon photonic crystal slab can be dramatically enhanced due to the involvement of the
Autor:
Sergey A. Dyakov, A. V. Dvurechenskii, Sergey M. Sergeev, Vladimir Zinovyev, Artem V. Peretokin, S. A. Rudin, M. V. Stepikhova, A. V. Novikov, A. V. Nenashev, Zhanna Smagina, E. E. Rodyakina
Publikováno v:
Nanomaterials
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 909, p 909 (2021)
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 909, p 909 (2021)
A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre