Zobrazeno 1 - 10
of 32
pro vyhledávání: '"M. V. Rzheutski"'
Autor:
M. V. Rzheutski, Ja. A. Solovjov, A. G. Vainilovich, I. Ya. Svitsiankou, A. N. Pyatlitski, D. V. Zhyhulin, E. V. Lutsenko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7 (125), Pp 144-151 (2019)
In order to develop a technology for the growth of Al(Ga)N-based heterostructures, the effect of different molecular beam epitaxy growth conditions on the properties of AlN and AlGaN layers was studied. The optimal conditions for the growth of AlN bu
Externí odkaz:
https://doaj.org/article/72fe1d83a59943ab97e0cb4f9685c8b3
Autor:
S. V. Nikanenka, E. V. Lutsenko, A. V. Danilchyk, V. A. Dlugunovich, V. A. Zhdanovskii, A. V. Kreidzich, A. A. Liplianin, M. V. Rzheutski
Publikováno v:
Pribory i Metody Izmerenij, Vol 6, Iss 1, Pp 10-17 (2015)
Information about principle of operation of the setup for measurement of the photometric, radiometric, spectral and spatial characteristics of radiation of laser diodes and LEDs in the spectral range from 250 to 900 nm constructed in the B.I. Stepano
Externí odkaz:
https://doaj.org/article/c0336184dcb841429fe847827d343281
Autor:
Ja. А. Solovjov, D. V. Zhyhulin, A. N. Pyatlitski, E. V. Lutsenko, A. G. Vainilovich, M. V. Rzheutski, I. E. Svitsiankou
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7 (125), Pp 144-151 (2019)
In order to develop a technology for the growth of Al(Ga)N-based heterostructures, the effect of different molecular beam epitaxy growth conditions on the properties of AlN and AlGaN layers was studied. The optimal conditions for the growth of AlN bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaa31035e3f0d09a640e1051d08dab9c
https://doklady.bsuir.by/jour/article/view/2238
https://doklady.bsuir.by/jour/article/view/2238
Autor:
Dmitrii V. Nechaev, Stefan Ivanov, Evgenii V. Lutsenko, V. N. Jmerik, M. V. Rzheutski, A. V. Danilchyk, A. V. Nagorny
Publikováno v:
Quantum Electronics. 49:535-539
The stimulated emission and photoluminescence of ultrathin GaN quantum wells with a nominal thickness of 1.5 – 2 monolayers (MLs) and AlN barrier layers 4 – 6.66 ML thick, obtained by plasma-activated molecular beam epitaxy on c-sapphire substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae555dbb8428369cd81c42cc61a19d71
https://doi.org/10.1070/qel17035
https://doi.org/10.1070/qel17035
Autor:
A. N. Alekseev, I. E. Svitsiankou, G. P. Yablonskii, A. V. Nagorny, A. N. Pyatlitski, A. G. Vainilovich, D. V. Zhigulin, V. A. Shulenkova, V. A. Solodukha, Ya. A. Solov’ev, S. I. Petrov, Evgenii V. Lutsenko, M. V. Rzheutski
Publikováno v:
Quantum Electronics. 49:540-544
By optimising the growth temperature of the AlGaN layers and using high-temperature AlN buffer layers, high-quality Al x Ga1 – x N layers (x = 0.15, 0.21, 0.26, and 0.3) were obtained, in which stimulated emission in the UV spectral range 330 – 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75fd93e4f0ff03b45e7633dd46bd0851
https://doi.org/10.1070/qel17031
https://doi.org/10.1070/qel17031
Autor:
V. V. Mamaev, Evgenii V. Lutsenko, M. V. Rzheutski, A. N. Alexeev, S. I. Petrov, S.A. Novikov
Publikováno v:
Journal of Crystal Growth. 514:40-44
It is shown that the use of high-temperature AlN/AlGaN buffer layers grown by NH3-MBE at extremely high temperatures (up to 1200 °C) allows one to improve drastically the structural quality of topmost GaN layer. The influence of an ammonia flow in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad5e850ab2fe413e044abd769c9f3ab6
https://doi.org/10.1016/j.jcrysgro.2019.02.047
https://doi.org/10.1016/j.jcrysgro.2019.02.047
Autor:
E. V. Muravitskaya, S. I. Petrov, E. V. Lutsenko, A. N. Alexeev, V. A. Shulenkova, M. V. Rzheutski, I. E. Svitsiankou, A. G. Vainilovich, G. P. Yablonskii
Publikováno v:
Semiconductors. 52:2107-2110
The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53310e33f46c084f484ff455135a86e
https://doi.org/10.1134/s1063782618160170
https://doi.org/10.1134/s1063782618160170
Autor:
Dmitri S Arteev, Andrey F. Tsatsulnikov, Alexei V. Sakharov, W. V. Lundin, Evgenii V. Lutsenko, M. V. Rzheutski, E. E. Zavarin
Publikováno v:
Semiconductor Science and Technology. 36:125007
The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b34743e37e24b8cf882a0e77ee032662
https://doi.org/10.1088/1361-6641/abfbdb
https://doi.org/10.1088/1361-6641/abfbdb
Autor:
M. S. Leanenia, G. P. Yablonskii, T. G. Naghiyev, Evgenii V. Lutsenko, M. V. Rzheutski, O. B. Tagiev
Publikováno v:
Journal of Applied Physics. 129:243104
The photoluminescence (PL) of CaGa2S4:Pr3+ chalcogenide semiconductor compound is studied. The PL spectrum consists of a set of intense sharp lines at 494, 631, 654, and 741 nm, formed by intra-4f transitions of Pr3+ ions. The energy level diagram of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90beaafbe1cf94dabb096df63048a33f
https://doi.org/10.1063/5.0051319
https://doi.org/10.1063/5.0051319
Autor:
Evgenii V. Lutsenko, M. V. Rzheutski, S. A. Abushev, M. S. Leanenia, V. N. Pavlovskii, O. B. Tagiev, G. P. Yablonskii, T. G. Naghiyev, B. G. Tagiev
Publikováno v:
Journal of Luminescence. 181:121-127
The detailed investigation of CaxBa1−xGa2S4:Eu2+ solid solutions photoluminescence caused by 5d→4f electronic transitions in Eu2+ ions with x value from 0.1 to 0.9 in wide excitation intensity and temperature intervals was performed. It is shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2b1a2554571036ad80c499ec018363
https://doi.org/10.1016/j.jlumin.2016.09.017
https://doi.org/10.1016/j.jlumin.2016.09.017