Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M. V. Petrichuk"'
Autor:
V. V. Klepko, Alexander Pud, Yu. V. Noskov, N. A. Ogurtsov, O. S. Kruglyak, S. I. Bohvan, M. V. Petrichuk
Publikováno v:
Theoretical and Experimental Chemistry. 54:114-121
The effect of an oxidant (salts of Fe3+ and three different sulfonic acids) and a dopant anion on the morphology, structure, and properties of polypyrrole and its nanocomposites with carbon nanotubes was established. The practical applicability of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531f8b84e35a0cae1ac2e7cd57656637
https://doi.org/10.1007/s11237-018-9554-x
https://doi.org/10.1007/s11237-018-9554-x
Publikováno v:
Technical Physics. 55:521-525
The effect of a magnetite Fe3O4 nanopowder in a nanocomposite with manganite La0.67Sr0.33MnO3 on its magnetoresistive effect and conductivity is studied. The addition of a magnetite nanopowder to the initial material leads to a substantial (twofold)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59578f7d5aedf9ca3e99b1377a6a2fee
https://doi.org/10.1134/s1063784210040158
https://doi.org/10.1134/s1063784210040158
Publikováno v:
Technical Physics. 50:766-770
The behavior of magnetic clusters in a magnetic liquid placed in a circular capillary is considered. When a uniform magnetic field is applied to the system, acicular clusters grow from the sediment, being aligned with the field. The interaction of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfe3c63cb1f148a3b95f5d9f18668ad
https://doi.org/10.1134/1.1947355
https://doi.org/10.1134/1.1947355
Publikováno v:
Journal of Applied Physics. 94:4461-4469
In this article, the impact of several electrical and technological parameters on a particular type of Lorentzian noise, occurring in deep submicron silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors with an ultrathin g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::820bb55ac3a647601f4eca9472c34472
https://doi.org/10.1063/1.1604452
https://doi.org/10.1063/1.1604452
Publikováno v:
AIP Conference Proceedings.
Noise spectra have been measured in p+np+, p+pp+, and n+nn++ MOSFETs prepared by ZMR. By analyzing them, the conclusions have been made about the parameters and some peculiar features of the silicon layer and Si–SiO2 interfaces with the gate and bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45781fd0c2c64e10efa9bdfb7db99859
https://doi.org/10.1063/1.44670
https://doi.org/10.1063/1.44670