Zobrazeno 1 - 10
of 108
pro vyhledávání: '"M. V. Entin"'
Publikováno v:
JETP Letters, vol. 103, iss. 5, pp. 372 - 377 (2016)
Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. T
Externí odkaz:
http://arxiv.org/abs/1512.04733
Publikováno v:
JETP Letters. 115:608-614
Publikováno v:
Physical Review B. 107
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:545-552
The paper reviews studies of the Laboratory of Theoretical Physics of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Two research directions are discussed: transport properties of two-dimensional exciton
Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc83bdf7b2705e1de91237763a5fd1b1
http://arxiv.org/abs/2111.15530
http://arxiv.org/abs/2111.15530
Publikováno v:
JETP Letters. 116:412-412
Autor:
V. M. Kovalev, M. V. Entin
We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal incidence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a62218739d9f008873d1cca912b7e6a6
Autor:
Mehrdad Mahmoodian, M V Entin
Publikováno v:
Journal of Physics: Conference Series. 2227:012012
The results of modeling a finite system of interacting two-dimensional electrons placed at zero temperature into an external parabolic potential well are presented. The structure of the 2D Wigner cluster is found. The distribution functions of intere
Publikováno v:
Semiconductors. 52:1468-1472
The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of
Publikováno v:
Semiconductors. 52:526-530
The linearity of the edge states spectrum in a 2D topological insulator, important for various transport phenomena, is studied. Different edge state models are examined. It is found that, in some of them, the linearity is perfect, while, in others, t