Zobrazeno 1 - 10
of 19
pro vyhledávání: '"M. V. Dolguikh"'
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 2:51-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2caae2c06454989e0b7352a5228748c
https://doi.org/10.1166/jno.2007.004
https://doi.org/10.1166/jno.2007.004
Autor:
E.W. Nelson, William G. Vernetson, Andrei V. Muravjov, Elena Flitsiyan, Robert E. Peale, T. W. Du Bosq, C. J. Fredricksen, M. V. Dolguikh, S. H. Kleckley
Publikováno v:
Journal of Applied Physics. 96:1-6
A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD signifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276a32db45dbfa5129108dd79969da38
https://doi.org/10.1063/1.1753659
https://doi.org/10.1063/1.1753659
Autor:
Chris J. Fredricksen, Andrei V. Muravjov, Justin W. Cleary, William R. Folks, Oliver Edwards, Jasen Enz, Todd W. Du Bosq, Glenn D. Boreman, Sidhartha K. Pandey, M. V. Dolguikh, Robert E. Peale
Publikováno v:
SPIE Proceedings.
A scanning Fabry-Perot transmission filter composed of a pair of dielectric mirrors has been demonstrated at millimeter and sub-millimeter wavelengths. The mirrors are formed by alternating quarter-wave optical thicknesses of silicon and air in the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77257b7e333c188005d357e55a8a8d11
https://doi.org/10.1117/12.700718
https://doi.org/10.1117/12.700718
Publikováno v:
Physical Review B. 73
Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10426e4e9b184fdab1e835e66d86ef63
https://doi.org/10.1103/physrevb.73.075327
https://doi.org/10.1103/physrevb.73.075327
Autor:
A. V. Muravjov, M. V. Dolguikh, David W. Weyburne, Candace Lynch, Robert E. Peale, David Bliss, Richard A. Soref
Publikováno v:
SPIE Proceedings.
A recently proposed THz laser concept in homoepitaxially grown p-Ge with layered doping is reviewed. Prospects for realizing a similar design in Si or GaAs are considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f076c14e49efa56652bfcfd899211d60
https://doi.org/10.1117/12.617805
https://doi.org/10.1117/12.617805
Publikováno v:
SPIE Proceedings.
Calculated terahertz gain for periodically delta-doped p-Ge films with vertical and in-plane transport and an orthogonal magnetic field are compared. Gain as a function of structure period, doping concentration, field strength, and temperature is cal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb8e71759a1113a23e7ef71215b5f81a
https://doi.org/10.1117/12.604176
https://doi.org/10.1117/12.604176
Autor:
T. J. Mahaney, Aravinda Kar, Z. Tian, Thomas Andrew Winningham, M. V. Dolguikh, Mikhail Klimov, Robert E. Peale, A. V. Muravjov, Sachin Bet
Publikováno v:
SPIE Proceedings.
A direct-write pulsed Nd:yttrium-aluminum-garnet laser treatment in an aluminum-containing gas was applied to the polished surface of an undoped Ge wafer. After KOH etching to remove metallic aluminum deposited on the surface, secondary ion mass spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ad6ac6c6742a7e93ef50f7945daa5c
https://doi.org/10.1117/12.585470
https://doi.org/10.1117/12.585470
Publikováno v:
SPIE Proceedings.
A new geometry for the intersubband THz laser on delta-doped multi-layer Ge thin films with in-plane transport of carriers in crossed electric and magnetic fields is proposed. A remarkable increase of the gain compared to existing bulk p-Ge lasers is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63836be59906ccb7004fee014d74ff96
https://doi.org/10.1117/12.589694
https://doi.org/10.1117/12.589694
Autor:
C. J. Fredricksen, T. J. Mahaney, M. V. Dolguikh, A. V. Muravjov, C. Mathis, T. W. Du Bosq, Kijun Park, Robert E. Peale
Publikováno v:
Optical Terahertz Science and Technology.
Innovations in intracavity wavelength selection in the range 1.5 to 4.2 THz and compact control electronics enable a commercial application for a far-infrared p-Ge laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8608318c551d9027c9f7e3a1257a71b6
https://doi.org/10.1364/otst.2005.wa5
https://doi.org/10.1364/otst.2005.wa5
Publikováno v:
Optical Terahertz Science and Technology.
A proposed multi-layer planar intersubband THz laser in p-type germanium is tested by numerical simulation and preliminary experiments. Population inversion and gain sufficient for laser operation are expected up to 77 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::982dbc1c980c1fa76145baa3bbe13321
https://doi.org/10.1364/otst.2005.wa6
https://doi.org/10.1364/otst.2005.wa6