Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. V. Baranovskiy"'
Publikováno v:
Semiconductors. 47:58-62
Dependences of the photocurrent of InGaN/GaN multiple-quantum-well heterostructures on reverse bias are studied. Features associated with the sequential passage of the boundary of the space-charge region through the quantum wells of the structure und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d47d961dce175970935fd43c7304920
https://doi.org/10.1134/s1063782613010053
https://doi.org/10.1134/s1063782613010053
Autor:
G. F. Glinskii, M. V. Baranovskiy
Publikováno v:
Technical Physics Letters. 39:460-462
A new photoelectric method for rapid diagnostics of light-emitting diodes (LEDs) based on InGaN/GaN multiple quantum well (QW) heterostructures has been developed. An automated setup has been created for determining the arrangement of QWs in heterost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::255b7673b1cd4fbc56181e006ae59b5b
https://doi.org/10.1134/s1063785013050179
https://doi.org/10.1134/s1063785013050179
Autor:
G F Glinskii, M V Baranovskiy
Publikováno v:
Journal of Physics: Conference Series. 461:012039
Photocurrent and photoconductivity of InGaN/GaN multiple quantum well heterostructures as a function of applied reverse bias is investigated. Optical excitation was carried out in blue and violet regions of the spectrum, and temperature was ranging f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::932ecdac33328f73385aff461fdbb35e
https://doi.org/10.1088/1742-6596/461/1/012039
https://doi.org/10.1088/1742-6596/461/1/012039