Zobrazeno 1 - 7
of 7
pro vyhledávání: '"M. V. Baranovskiy"'
Publikováno v:
Semiconductors. 47:58-62
Dependences of the photocurrent of InGaN/GaN multiple-quantum-well heterostructures on reverse bias are studied. Features associated with the sequential passage of the boundary of the space-charge region through the quantum wells of the structure und
Autor:
G. F. Glinskii, M. V. Baranovskiy
Publikováno v:
Technical Physics Letters. 39:460-462
A new photoelectric method for rapid diagnostics of light-emitting diodes (LEDs) based on InGaN/GaN multiple quantum well (QW) heterostructures has been developed. An automated setup has been created for determining the arrangement of QWs in heterost
Autor:
G F Glinskii, M V Baranovskiy
Publikováno v:
Journal of Physics: Conference Series. 461:012039
Photocurrent and photoconductivity of InGaN/GaN multiple quantum well heterostructures as a function of applied reverse bias is investigated. Optical excitation was carried out in blue and violet regions of the spectrum, and temperature was ranging f
Publikováno v:
Semiconductors. Jan2013, Vol. 47 Issue 1, p58-62. 5p.
Autor:
Baranovskiy, M.1 maxim.bmw.spb@gmail.com, Glinskii, G.1
Publikováno v:
Technical Physics Letters. May2013, Vol. 39 Issue 5, p460-462. 3p.
Autor:
Pena, F. S., Peres, M. L., Pirralho, M. J. P., Soares, D. A. W., Fornari, C. I., Rappl, P. H. O., Abramof, E.
Publikováno v:
Applied Physics Letters; 11/6/2017, Vol. 111 Issue 19, p192105-1-192105-5, 5p, 1 Diagram, 3 Graphs
Autor:
Baranovskiy, M V, Glinskii, G F
Publikováno v:
Journal of Physics: Conference Series; 2013, Vol. 461 Issue 1, p012039-012043, 5p