Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. V. Baeta Moreira"'
Publikováno v:
Microelectronic Engineering. 15:573-576
We studied the influence of the growth temperature T s and of the InGaAs quantum-well channel thickness d ch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE). In agreem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::affc6485cb6bcd8be88d453e1536f6d5
https://doi.org/10.1016/0167-9317(91)90287-n
https://doi.org/10.1016/0167-9317(91)90287-n
Publikováno v:
Microelectronic Engineering. 15:577-580
An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law dependence (with an exponent k > 0 for GaAs/AlGaAs MODFET's and k < 0 for Si-MOSFET's) of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4874a17b448686015acb01bc2db05999
https://doi.org/10.1016/0167-9317(91)90288-o
https://doi.org/10.1016/0167-9317(91)90288-o
Publikováno v:
MRS Proceedings. 326
We have performed low temperature (5K) photoluminescence (PL) measurements in order to study the crystalline quality of pseudomorphic modulation-doped field effect transistors (MODFET's) grown by MBE. MODFET's based on GaAs/AlGaAs with either an InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64534a06c546e5e1f195fc377243a2cb
https://doi.org/10.1557/proc-326-537
https://doi.org/10.1557/proc-326-537
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2064
In this work, we present the Hall electrical properties for molecular beam epitaxy,grown modulation-doped field-effect transistors structures using a short-period superlattices channel of (InAs)(1.1+/-0.1) (GaAs)(n) where the indexes 1.1 and n repres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79f15a3ed4e5db78634db2fc537a9853
https://doi.org/10.1116/1.588134
https://doi.org/10.1116/1.588134
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:601
The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2097a1731d7fa7b9271a130c9236e81
https://doi.org/10.1116/1.586807
https://doi.org/10.1116/1.586807
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:103
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30cb565e094fe705cb337a5ed3497df7
https://doi.org/10.1116/1.586307
https://doi.org/10.1116/1.586307
Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/InyGa1-yAs/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9015f4b17884855a29d96e7a1f3b17be
https://infoscience.epfl.ch/record/210842
https://infoscience.epfl.ch/record/210842
We present a correlation between the behaviour of the RHEED specular reflected beam intensity during the initial phases of growth, the MBE growth conditions (T(s), P(As4), V(GaAs)), and the surface morphology examined by Nomarski contrast microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e751ea2851d479d3b8f435c583d647cb
https://infoscience.epfl.ch/record/210845
https://infoscience.epfl.ch/record/210845
Autor:
G. M. Ribeiro, Rero Marques Rubinger, A. G. de Oliveira, M. V. Baeta Moreira, J. A. Corrêa, M. I. N. da Silva
Publikováno v:
Scopus-Elsevier
Through photo-Hall measurements at temperatures below about 120 K, we have observed the presence of a deep donor defect, with characteristics similar to those of the EL2 center, in planar-doped GaAs samples grown by molecular beam epitaxy at 300 °C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aedb7bf9fc2c1a450679b90ee9b4681d
http://www.scopus.com/inward/record.url?eid=2-s2.0-0345589011&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0345589011&partnerID=MN8TOARS