Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. U. Nasyrov"'
Autor:
V. N. Ivanov, V. V. Milenin, V. P. Kladko, Alexander Belyaev, N. S. Boltovets, P. V. Nevolin, M. U. Nasyrov, Ya. Ya. Kudryk, A. B. Kamalov, L. M. Kapitanchuk, R. V. Konakova
Publikováno v:
Semiconductors. 43:1428-1432
Au-TiBx-AuGe-n-GaP ohmic contacts have been investigated before and after rapid thermal annealing at T = 723, 773, and 873 K for 60 s in a hydrogen atmosphere. It is shown that the contact resistivity decreases with an increase in temperature in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb43c024cd725b3263931829fca3067d
https://doi.org/10.1134/s1063782609110062
https://doi.org/10.1134/s1063782609110062
Autor:
L. M. Kapitanchuk, A. B. Kamalov, N. S. Boltovets, R. V. Konakova, V. V. Milenin, V. N. Ivanov, Ya. Ya. Kudryk, O. S. Lytvyn, M. U. Nasyrov, Alexander Belyaev
Publikováno v:
Semiconductors. 42:453-457
The effect of rapid thermal annealing on the parameters of TiBx-n-GaP Schottky barriers and interphase interactions at the TiBx-GaP interface are studied. It is shown that the contact TiBx-n-GaP system features an increased thermal stability without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9865a2b5b7ce86c5706819b1915ac16
https://doi.org/10.1134/s1063782608040143
https://doi.org/10.1134/s1063782608040143