Zobrazeno 1 - 7
of 7
pro vyhledávání: '"M. U. Khazhiev"'
Publikováno v:
Journal of Engineering Physics and Thermophysics. 93:1036-1041
A study has been made of the activation energy of the conductance of a p–n-4H-SiC 〈Al〉 structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959771c2491b90f513f490f833761ec1
https://doi.org/10.1007/s10891-020-02205-5
https://doi.org/10.1007/s10891-020-02205-5
Publikováno v:
Applied Solar Energy. 53:322-325
By means of chemical vapor deposition (CVD) in a quasi-closed space with the use of a separate vaporizer, indium and tin oxides (ITOs)/glass structures with high conductivity and transparency and a thickness of up to 3 μm are obtained; they are suit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbcaf40f617f12d8f6ffe66bdc5ca995
https://doi.org/10.3103/s0003701x1704003x
https://doi.org/10.3103/s0003701x1704003x
Publikováno v:
Applied Solar Energy. 52:61-67
The load characteristics of n-CdS/p-CdTe heterostructures were studied at different lighting levels with monochromatic light (λ = 632.8 nm) and white light with different spectra of radiation. It was established that the efficiency of conversation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44eface312b28255a366128adb535ca5
https://doi.org/10.3103/s0003701x16010047
https://doi.org/10.3103/s0003701x16010047
Publikováno v:
Technical Physics Letters. 36:115-118
Single-crystalline Si1 − xGex ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350f3db05e481017e346b4c4b7f229f4
https://doi.org/10.1134/s1063785010020070
https://doi.org/10.1134/s1063785010020070
Publikováno v:
Inorganic Materials. 44:675-679
We have studied the properties of Si1 − x Gex-based p-i-n structures and Schottky barriers in which the i-region had been produced via compensation with gold. The results demonstrate that the use of a guard ring in p-Si1 − xGex〈Au〉 structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::234bc8539180e120e6a04c70176c35a4
https://doi.org/10.1134/s0020168508070017
https://doi.org/10.1134/s0020168508070017
Publikováno v:
Inorganic Materials. 44:453-456
p-Si1 − xGex crystals have been diffusion-doped with gold. Gold diffusion in the p-Si1 − xGex〈Au〉 samples and their electrical properties have been studied. The results demonstrate that the highest gold concentration in the crystals can be ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce4c459bcc3ef00ef50c118f1614fd5
https://doi.org/10.1134/s0020168508050038
https://doi.org/10.1134/s0020168508050038
Publikováno v:
Physics of the Solid State. 47:2025
The effect of a magnetic field on the photocurrent Iph in Si and GaAs solar cells is investigated. It is shown that the observed change in the photocurrent Iph of the solar cells in response to a magnetic field can be caused by a decrease in the diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b63df98badd6645f038ed3f1be54988
https://doi.org/10.1134/1.2131139
https://doi.org/10.1134/1.2131139