Zobrazeno 1 - 6
of 6
pro vyhledávání: '"M. U. Hajiev"'
Publikováno v:
Journal of Spectroscopy, Vol 2018 (2018)
Optical absorption of p-n-4H-SiC structures doped with boron and aluminum by low-temperature diffusion was studied for the first time. Diffusion of impurities was performed from aluminum-silicate and boron-silicate films (sources) fabricated by vario
Externí odkaz:
https://doaj.org/article/70ca34f8b79b43578280a8ae1f5ff33e
Publikováno v:
Applied Solar Energy. 52:118-121
ITO structures (indium and tin oxides)/glass characterized by high conductivity and transparency and a thickness of up to 3 μm applicable for the fabrication of solar cells on their basis were grown by the chemical vapor deposition technique in a qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662af88b7ffe44f5e854321a4d26885f
https://doi.org/10.3103/s0003701x16020079
https://doi.org/10.3103/s0003701x16020079
Publikováno v:
Journal of Spectroscopy, Vol 2018 (2018)
Optical absorption of p-n-4H-SiC structures doped with boron and aluminum by low-temperature diffusion was studied for the first time. Diffusion of impurities was performed from aluminum-silicate and boron-silicate films (sources) fabricated by vario
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fa5b4915ba38209fba22f27d25df032
https://doaj.org/article/70ca34f8b79b43578280a8ae1f5ff33e
https://doaj.org/article/70ca34f8b79b43578280a8ae1f5ff33e
Publikováno v:
Semiconductors. 44:1606-1610
The effect of various chemical treatments of the alloy surface on the properties of Ti-p-SiGe and Ni-p-SiGe contacts fabricated by vacuum thermal deposition at a substrate temperature of 350–400°C has been studied. Etching under various conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a22826fb722d13330a5737a92f3f1f
https://doi.org/10.1134/s1063782610120134
https://doi.org/10.1134/s1063782610120134
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
Publikováno v:
Semiconductors. 44:605-609
The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D ss). It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb59b7a0d358ee08df2de4d49e07647
https://doi.org/10.1134/s1063782610050106
https://doi.org/10.1134/s1063782610050106
Autor:
N. A. Matchanov, M. S. Saidov, D. Saidov, L. I. Khirunenko, S. L. Lutpullaev, M. U. Hajiev, A. Yusupov, I. G. Atabaev
Publikováno v:
Physics of the Solid State. 49:1658-1660
The concentration of divacancies formed in Si1 − xGex solid solutions under irradiation by fast and slow neutrons is investigated as a function of the germanium content. It is demonstrated that the role of annihilation of primary radiation-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b8abebf4f4a086118cc4aabed8f5f5
https://doi.org/10.1134/s1063783407090090
https://doi.org/10.1134/s1063783407090090