Zobrazeno 1 - 10
of 68
pro vyhledávání: '"M. Terlemezoglu"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:25225-25233
The structural and optical properties of electrodeposited Cd1-xZnxS nanostructured thin films were investigated in the present paper for compositions of x = 0, 0.03, 0.06 and 0.09. X-ray diffraction patterns of the deposited thin films consisted of d
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:15851-15856
In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated β-In2S3 thin films. The crystalline structure of
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:14330-14335
TlGaS2 and TlGaSe2 ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications.
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:11390-11397
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showe
Publikováno v:
Applied Physics A. 128
Publikováno v:
Optical Materials. 133:113047
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Akademický článek
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Characterization of one-step deposited Cu2ZnSnS4 thin films derived from a single crystalline powder
Publikováno v:
Renewable Energy. 143:1133-1142
In this paper, Cu-deficient and Zn-rich Cu2ZnSnS4 (CZTS) single crystals were successfully grown by Bridgman technique. Following the investigation of structural and photo-electrical properties of the grown CZTS crystal, the powder extracted from it
Publikováno v:
Physica B: Condensed Matter. 570:246-253
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail