Zobrazeno 1 - 10
of 1 014
pro vyhledávání: '"M. Takeya"'
Publikováno v:
Biosurface and Biotribology, Vol 2, Iss 3, Pp 114-120 (2016)
We used polymethylmethacrylate (PMMA) particles to investigate the relationship between particle properties and biological responses of macrophages. In a previous study, we reported that biological response of these immune cells was activated by a sp
Externí odkaz:
https://doaj.org/article/29cd47184fc64f7f9da97db52f9923a7
Publikováno v:
Biosurface and Biotribology, Vol 2, Iss 1, Pp 18-25 (2016)
Ultra-high molecular weight polyethylene (UHMWPE) wear particles from artificial joints induce osteolysis and the subsequent loosening of implants. Studies have reported that particles in the size range of 0.1–10 μm are the most biologically activ
Externí odkaz:
https://doaj.org/article/65cd9a367ad04d159f44b2db5246777a
Publikováno v:
European Heart Journal. 40
Background and introduction Diabetic patients are at high risk of adverse cardiovascular events after percutaneous coronary intervention (PCI) even with durable polymer drug-eluting stents. A biodegradable polymer everolimus-eluting stents (BP-EES) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34208ae77b86c3d0c411937a45c9397b
https://doi.org/10.1093/eurheartj/ehz748.1109
https://doi.org/10.1093/eurheartj/ehz748.1109
Akademický článek
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Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 10:1277-1286
We investigate degraded GaN-based laser diodes (LDs) on epitaxial lateral overgrown GaN layers in terms of dislocations. Almost all of the threading dislocations that appear in the wing regions are a-type dislocations. Their origins are the lateral e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95b20e90582cc1fef99927e43708712e
https://doi.org/10.1109/jstqe.2004.837735
https://doi.org/10.1109/jstqe.2004.837735
Autor:
Takao Miyajima, K. Watanabe, S. Goto, S. Takeda, M. Kato, N. Hara, H. Kurihara, Shigetaka Tomiya, M. Takeya, Y. Tsusaka, J. Matsui
Publikováno v:
physica status solidi (b). 240:285-288
We investigated the micrometer-scale structure of epitaxially laterally overgrown GaN (ELO-GaN) using a 2 x 4 μm 2 micro-beam X-ray of an 8-GeV storage ring. The GaN (0 0 0 12) rocking curve of the wing region had a sharp peak with a FWHM of 46 arcs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3085da72e8610b1d8788f0493a9595b
https://doi.org/10.1002/pssb.200303323
https://doi.org/10.1002/pssb.200303323
Autor:
Masao Ikeda, T. Fujimoto, Takashi Mizuno, S. Ikeda, Shu Goto, S. Uchida, Tsuyoshi Tojyo, O. Matsumoto, M. Takeya
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 9:1252-1259
The property of GaInN-AlGaN heterostructures and GaInN multiple quantum well (MQW) gain GaInN laser diodes with low internal loss are described. GaInN blue-violet laser diodes have been developed as a light source for optical disk recording. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0c15e016fde9b2c9ce5143db2c77bf4
https://doi.org/10.1109/jstqe.2003.820910
https://doi.org/10.1109/jstqe.2003.820910
Autor:
Tomonori Hino, S. Uchida, K. Shibuya, Takashi Mizuno, S. Ikeda, T. Asano, M. Ikeda, Tsuyoshi Tojyo, M. Takeya
Publikováno v:
IEEE Journal of Quantum Electronics. 39:135-140
400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully fabricated for the first time. A new ridge structure, in which the outside of the ridge is cov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747f7eba45431dc826de2e34923d236d
https://doi.org/10.1109/jqe.2002.806213
https://doi.org/10.1109/jqe.2002.806213
Autor:
Tsuyoshi Tojyo, S. Ikeda, Shu Goto, Takeharu Asano, Yoshifumi Yabuki, M. Takeya, O. Matsumoto, S. Uchida, Takashi Mizuno, Masao Ikeda
Publikováno v:
physica status solidi (a). 192:269-276
We have successfully fabricated high-power AlGaInN laser diodes with long lifetime, high kink level, wide beam divergence angle parallel to the junction plane (θ || ), and low relative intensity noise (RIN). We have also adopted a 3Φ sapphire subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a2857fa85d0d4e75f01372c87284c4
https://doi.org/10.1002/1521-396x(200208)192:2<269::aid-pssa269>3.0.co
https://doi.org/10.1002/1521-396x(200208)192:2<269::aid-pssa269>3.0.co
Autor:
Shu Goto, M. Takeya, S. Uchida, Masao Ikeda, Satoru Kijima, T. Asano, Tomonori Hino, Tsuyoshi Tojyo
Publikováno v:
physica status solidi (a). 188:55-58
We report on a novel laser structure for stabilizing transverse mode in AlGaInN-based high power laser diodes (LDs). AlGaInN-based laser structures were grown on epitaxially laterally overgrown GaN (ELO-GaN) by MOCVD. We have developed a novel ridge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::382e43078be346f0f77952e2616ee68f
https://doi.org/10.1002/1521-396x(200111)188:1<55::aid-pssa55>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<55::aid-pssa55>3.0.co