Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. T. Bulsara"'
Autor:
V. K. Yang, John A. Carlin, M. T. Currie, M. T. Bulsara, H. Badawi, Mark Somerville, A. Lochtefeld, J.G. Fiorenza, Z.Y. Cheng, T. A. Langdo, C. Leitz, G. Braithwaite
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
This paper investigates off-state current leakage in strained silicon NMOSFETs built on supercritical thickness strained silicon films. it describes a simple conceptual model for the off-state leakage: the leakage is caused by enhanced dopant diffusi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9310211e3b66226beb9d5bfec41d1597
https://doi.org/10.1109/relphy.2004.1315378
https://doi.org/10.1109/relphy.2004.1315378
Autor:
H. Badawi, Christopher J. Vineis, A. Lochtefeld, M. T. Currie, M. Erdtmann, M. T. Bulsara, J. Carlin, Z.Y. Cheng, Christopher W. Leitz, G. Braithwaite, T. A. Langdo, C. Major, V. K. Yang
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b776cef679c9f59581b90102e0ecd89
https://doi.org/10.7567/ssdm.2003.d-8-5l
https://doi.org/10.7567/ssdm.2003.d-8-5l
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d64cfd26981b7ff5b2101974a49df949
https://doi.org/10.7567/ssdm.2003.d-6-2
https://doi.org/10.7567/ssdm.2003.d-6-2