Zobrazeno 1 - 10
of 19
pro vyhledávání: '"M. T. Asom"'
Autor:
L.E. Rogers, Robert A. Morgan, Demetrios N. Christodoulides, G.D. Guth, M. T. Asom, J. M. Catchmark
Publikováno v:
IEEE Journal of Quantum Electronics. 32:986-995
We observe for the first time up to nine transverse modes lasing in the individual elements of a two-dimensional vertical-cavity top surface-emitting laser array under pulsed operation. These modes consist of the TEM/sub 0,0/, TEM/sub 0,1/, TEM/sub 1
Publikováno v:
Journal of Applied Physics. 74:1826-1831
We have performed an extensive series of measurements on symmetrical barrier bound‐to‐continuum and asymmetrical barrier bound‐to‐bound quantum well infrared photodetectors consisting of only a single well. We find that the behavior of the op
Publikováno v:
Journal of Applied Physics. 74:346-350
An extensive series of measurements and theoretical analysis are presented on an undoped single‐quantum‐well infrared photodetector. The well is filled by electron tunneling through the thin emitter barrier resulting in several novel characterist
Publikováno v:
Journal of Applied Physics. 72:4429-4443
We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband tran
Autor:
M. T. Asom, E.J. Laskowski, Stephen J. Pearton, M.W. Focht, Fan Ren, L.M.F. Chirovsky, R. F. Kopf, G. J. Przybylek, T.K. Woodward, S.-S. Pei, L.E. Smith, R.E. Leibenguth, G.D. Guth, J. M. Kuo, Anthony L. Lentine, L.A. D'Asaro
Publikováno v:
IEEE Electron Device Letters. 13:528-531
The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoe
Autor:
Lionel C. Kimerling, M. T. Asom, Eugene A. Fitzgerald, Ahmet Refik Kortan, A. M. Sergent, G. A. Thomas, R. A. Macharrie, B. E. Weir, F. A. Thiel, S. L. Cooper, Ya-Hong Xie, P. E. Freeland, W. P. Lowe
Publikováno v:
Journal of Electronic Materials. 20:489-501
We have investigated the stabilization of GexSn1-x on (001) InSb substrates, as well as InSb coated GaAs substrates. We find that alloys up to ≈1500A can be stabilized when 0 0.10, we observe partial phase separation into coherent α-Sn and α-GeSn
Publikováno v:
Materials Science Forum. :141-150
Publikováno v:
Applied Physics Letters. 64:2767-2769
We demonstrate electrical switching and modulation between two orthogonal polarization modes of air‐post vertical‐cavity surface emitting lasers with cruciform transverse cavity geometry. The continuous‐wave lasing emission is switched from one
Autor:
R. A. Morgan, M.W. Focht, J. M. Catchmark, L.C. Luther, D. N. Christodoulides, G. P. Przybylek, T. Mullally, M. T. Asom, R.E. Leibenguth, Keisuke Kojima, G.D. Guth
Publikováno v:
Applied Physics Letters. 63:3122-3124
We report over 130 °C continuous wave operation of unbonded vertical cavity top‐surface emitting lasers emitting more than 1.0 mW at 110 °C. Furthermore, we control threshold currents to within only ±1.35 mA (±12%) over a 150 °C temperature ra
Publikováno v:
Applied Physics Letters. 58:1256-1258
Changes in cathodoluminescence (CL) intensity from a buried single AlGaAs/GaAs/AlGaAs quantum well (QW) as a result of exposure to electron cyclotron resonance (ECR) hydrogen or argon discharges are reported. For additional dc biases of 150 V on the