Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M. Sultan M. Siddiqui"'
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 29:1707-1719
This work proposes an static random access memory (SRAM) with column-based split cell-VSS (CS-CVSS), data-aware write-assist (DAWA), and enhanced read sensing margin in 28-nm FDSOI technology. The proposed CS-CVSS and DAWA techniques improve both hal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33683d7a947095ede6708fc16df5c95c
https://doi.org/10.1109/tvlsi.2021.3102675
https://doi.org/10.1109/tvlsi.2021.3102675
Autor:
Loi Van Le, Sharma Ruchi, M. Sultan M. Siddiqui, Tony Tae-Hyoung Kim, Taegeun Yoo, Ik Joon Chang
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:468-474
In Space applications, the scaling of transistors has made integrated circuits (ICs) more susceptible to soft errors, caused by radiation strikes. When a soft error causes a bit flip in a memory device, this event is referred to as a Single Event Ups
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b341fbf46b58764c7a74357851035104
https://doi.org/10.1109/tdmr.2020.2994769
https://doi.org/10.1109/tdmr.2020.2994769
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:2091-2101
Bias temperature instability (BTI) degradation poses increasingly critical lifetime reliability design challenges in static random access memory (SRAM), as fabrication technology marches toward a very deep nanometer regime. This paper presents circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96cc8c155ad69f99f727ce499d941f3f
https://doi.org/10.1109/jssc.2019.2905343
https://doi.org/10.1109/jssc.2019.2905343
Autor:
M Sultan M Siddiqui, Basabi eBhaumik
Publikováno v:
Frontiers in Systems Neuroscience, Vol 7 (2013)
Inter-ocular differences in spatial frequency occur during binocular viewing of a surface slanted in depth. Cortical cells with inter-ocular differences in preferred spatial frequency (dif-frequency cells) are expected to detect surfaces slanted in d
Externí odkaz:
https://doaj.org/article/bfa7c7107008407fb280ec20002a043b
Autor:
Sudhir Kumar Sharma, Sudhir Kumar, Saurabh Porwal, M. Sultan M. Siddiqui, Khatik Bhagvan Pannalal
Publikováno v:
ISCAS
One read-write 8T SRAM cell with decoupled read port suffer data-dependent read bit line leakage, limiting VDDMIN of SRAMs in deep submicron technologies. This paper proposes a 10T SRAM cell in a typical sub-10nm FinFET technology with data-independe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a940914472e31ef92abdfcdf59e098c8
https://doi.org/10.1109/iscas.2019.8702335
https://doi.org/10.1109/iscas.2019.8702335
Autor:
Taegeun Yoo, Tony Tae-Hyoung Kim, Ruchi Sharma, Ik Joon Chang, Van Loi Le, M. Sultan M. Siddiqui
Publikováno v:
ISOCC
This work presents a radiation resilient SRAM with a self-refresh scheme and error correction. The self-refresh scheme maintains the number of Single Event Upsets (SEUs) below a correctable value during the idle mode by checking and correcting stored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::147ad05bf7a67073314b06fa0efa6e7c
https://doi.org/10.1109/isocc.2018.8649889
https://doi.org/10.1109/isocc.2018.8649889
Autor:
Sumit Srivastav, M. Sultan M. Siddiqui, Dattatray Ramrao Wanjul, Sudhir Kumar, Manankumar Suthar
Publikováno v:
VLSI Design
Two read-write 8T dual port static random accessmemories (SRAMs) suffer write disturb issue when both of its ports are accessed simultaneously. Write disturb is detrimental at low voltages in deep submicron technologies due to increased variations. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52b7b5600f661c0b164d852c7a7c962
https://doi.org/10.1109/vlsid.2018.74
https://doi.org/10.1109/vlsid.2018.74
Publikováno v:
ESSCIRC
This paper presents circuit techniques that support on-chip SRAM dynamic reliability management to prevent half-selected cell stability failure due to Bias Temperature Instability (BTI) degradation. The proposed techniques monitor the BTI degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b20e542773aeb9ce73c67909558fb79
https://doi.org/10.1109/esscirc.2016.7598335
https://doi.org/10.1109/esscirc.2016.7598335
Publikováno v:
BMC Neuroscience, Vol 11, Iss Suppl 1, p P81 (2010)
BMC Neuroscience
BMC Neuroscience
Visual cortex possesses features such as binocular disparity (DP), ocular dominance (OD), orientation preference (OR), direction preference (DS), and spatial frequency. Neurophysiological studies have explored the existence of orthogonal relationship
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6af750ea2a68e93d7cfa8b44389246bd
https://doaj.org/article/f011791ed90647d09d0e2edc1edc317b
https://doaj.org/article/f011791ed90647d09d0e2edc1edc317b
Autor:
M. Sultan M. Siddiqui, Basabi Bhaumik
Publikováno v:
IJCNN
In this paper we present reaction-diffusion based two eye model to develop disparity selective binocular simple cell receptive fields (RFs) in layer IV of cat visual cortex (V1). Pre-eye opening environment is used for development of binocular simple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d30cd2c9522c9a0dcf89d6bed84461
https://doi.org/10.1109/ijcnn.2010.5596541
https://doi.org/10.1109/ijcnn.2010.5596541