Zobrazeno 1 - 10
of 935
pro vyhledávání: '"M. Suezawa"'
Publikováno v:
physica status solidi (c). 2:1807-1811
The atomic structure of large agglomerates of interstitials in silicon crystals, i.e. rod-like defects (RLD), was extensively investigated previously using transmission electron microscopy (TEM) methods. Much less is known about electronic properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4405b3fe89dc6be6a8920305b9fb6e3e
https://doi.org/10.1002/pssc.200460509
https://doi.org/10.1002/pssc.200460509
Publikováno v:
Japanese Journal of Applied Physics. 42:6737-6741
We studied complexes of vacancies and impurities (oxygen and hydrogen) in electron-irradiated n-type Cz-Si pre-doped with hydrogen (H) and compared the results with those for high-resistivity Cz-Si specimens. Specimens were prepared from an n-type Cz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5fdd6b3917e7a2228b8131bf031778a
https://doi.org/10.1143/jjap.42.6737
https://doi.org/10.1143/jjap.42.6737
Autor:
T Mchedlidze, M Suezawa
Publikováno v:
Journal of Physics: Condensed Matter. 15:3683-3688
The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bb4e5a55e9ad6f44d59221767b37ffc
https://doi.org/10.1088/0953-8984/15/22/303
https://doi.org/10.1088/0953-8984/15/22/303
Publikováno v:
physica status solidi (b). 235:115-120
Complexes of point defects and impurities in electron-irradiated n-type Czochralski-grown Si (Cz-Si) pre-doped with hydrogen (H) were studied and the results compared with those in high-purity specimens. Specimens were n-type (1.3 Ω cm) Cz-Si. They
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d20af1912a7e90f82a2142b490a61d0
https://doi.org/10.1002/pssb.200301538
https://doi.org/10.1002/pssb.200301538
Publikováno v:
Journal of Applied Physics. 92:6561-6566
The properties of many optical absorption peaks in electron-irradiated n-type Si crystals were studied. Specimens were prepared from various Si crystals. After chemical etching, they were irradiated with 3 MeV electrons at room temperature (RT). Thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2587439139c350c8fe00f2506d74dfd6
https://doi.org/10.1063/1.1519343
https://doi.org/10.1063/1.1519343
Publikováno v:
Journal of Applied Physics. 91:5831-5839
Neutron-irradiation-induced defects in hydrogenated Si were investigated by detecting optical absorption due to their complexes with hydrogen. Specimens were doped with hydrogen by heating in H2 gas at 1300 °C followed by quenching in water. They we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca7e30dbc091eac28a429eaf9f899f5
https://doi.org/10.1063/1.1468910
https://doi.org/10.1063/1.1468910
Publikováno v:
Physica B: Condensed Matter. :276-279
We found many optical absorption peaks in electron-irradiated n-type Si crystals. Specimens were prepared from various Si crystals. After chemical etching, they were irradiated with 3-MeV electrons at RT. Their optical absorption spectra were measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b79471898745119ec3f8b7688e1e66
https://doi.org/10.1016/s0921-4526(01)00794-3
https://doi.org/10.1016/s0921-4526(01)00794-3
Publikováno v:
physica status solidi (b). 210:545-549
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930f498d7500fa7ccbc8165d39e27278
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<545::aid-pssb545>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<545::aid-pssb545>3.0.co
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :395-398
The electronic structures of the valence and the conduction bands of bulk single crystallineSixGe−x alloys (x = 0, 0.05, 0.135, 0.18, 0.47, 1) are studied by X-ray photoemission spectroscopy and bremsstrahlung isochromat spectroscopy. The valence b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aff75f7fab608772c25a84d53effee5e
https://doi.org/10.1016/s0368-2048(97)00187-4
https://doi.org/10.1016/s0368-2048(97)00187-4
Autor:
H. Hatakeyama, M. Suezawa
Publikováno v:
Journal of Applied Physics. 82:4945-4951
We studied the process of generation and some properties of shallow donors generated by annealing a hydrogen-doped Czochralski-grown silicon crystal after electron irradiation. Hydrogen was doped by annealing specimens at 1200 °C in hydrogen atmosph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::696233b87b0e0d31dcc06c898e6a8f92
https://doi.org/10.1063/1.366361
https://doi.org/10.1063/1.366361