Zobrazeno 1 - 10
of 65
pro vyhledávání: '"M. Stellmacher"'
Publikováno v:
Annales Geophysicae, Vol 16, Pp 140-147 (1998)
The ionosphere influences magnetohydrodynamic waves in the magnetosphere by damping because of Joule heating and by varying the wave structure itself. There are different eigenvalues and eigensolutions of the three dimensional toroidal wave equati
Externí odkaz:
https://doaj.org/article/ef0921b964c443e3a215cf7010bda585
Publikováno v:
Annales Geophysicae, Vol 15, Pp 614-624 (1997)
For more than two decades numerical models of the Earth's magnetosphere have been used successfully to study magnetospheric dynamic features such as the excitation of ULF pulsations and the mechanism of field line resonance. However, numerical for
Externí odkaz:
https://doaj.org/article/b89215f92ed34d1eb086f35ecb8b2c92
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Publikováno v:
Journal of Crystal Growth. 234:279-284
We have modelled the incorporation of As antisite defects in GaAs during epitaxial growth. The model assumes that the antisite is introduced as a result of the incorporation of an As2 molecule occupying a Ga site without being dissociated. The antisi
Publikováno v:
Semiconductor Science and Technology. 16:440-446
We have performed a systematic study of GaAs layers grown at low temperature against the growth temperature and annealing treatments using x-ray diffraction, IR absorption, Hall effect, electron diffraction and Auger spectroscopies. The correlation b
A new particle tracking algorithm based on deterministic annealing and alternative distance measures
Autor:
Klaus Obermayer, M. Stellmacher
Publikováno v:
Experiments in Fluids. 28:506-518
We describe a new particle tracking algorithm for the interrogation of double frame single exposure data, which is obtained with particle image velocimetry. The new procedure is based on an algorithm which has recently been proposed by Gold et al. (G
Autor:
R Bisaro, M. Toufella, E. Bedel, Robert Carles, Gérard Benassayag, R Sirvin, Pascal Puech, M Stellmacher, Chantal Fontaine, A. Claverie, J Nagle
Publikováno v:
Journal of Physics: Condensed Matter. 12:2895-2902
Using the optical phonons as an internal probe, the change in the dielectric permittivity has been analysed by Raman scattering in GaAs grown by MBE at low temperature (LT-GaAs). The screening effect is discussed in terms of a solid solution whereas
Publikováno v:
Semiconductor Science and Technology. 15:44-50
The optical and electrical characteristics of a set of devices in which the periodicity of the superlattice layers has been chirped are presented. The operation of these devices can be explained through the delocalization of electron wavefunctions wh
Autor:
Didier Stiévenard, J.P. Nys, J. Nagle, Christophe Delerue, M. Stellmacher, Bruno Grandidier, M. Lannoo, H Hammadi, Jacques Bourgoin
Publikováno v:
Physica B: Condensed Matter. :725-728
We have studied the incorporation of As antisite defects in GaAs during epitaxial growth. The growths have been performed by molecular beam epitaxy at low temperature, by metal organic chemical vapor deposition and by a special chemical vapor phase t
Publikováno v:
Journal of Crystal Growth. :206-211
Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm of AlAs is required. Structures with good quality QW