Zobrazeno 1 - 10
of 43
pro vyhledávání: '"M. Stadele"'
Autor:
M. Stadele, W. Rosner, M. Kittler, Ralf Granzner, Frank Schwierz, V. M. Polyakov, Richard Johannes Luyken
Publikováno v:
Microelectronic Engineering. 83:241-246
The dc behavior of single-gate and double-gate MOSFETs with gate lengths ranging from 5 to 100nm is simulated using drift-diffusion, hydrodynamic, and Monte Carlo approaches. It is shown that by simple adjustments of the drift-diffusion and hydrodyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::756f5edaf2addf4c70e859e71edb5759
https://doi.org/10.1016/j.mee.2005.08.003
https://doi.org/10.1016/j.mee.2005.08.003
Autor:
Johannes Kretz, L. Dreeskornfeld, F. Hofmann, L. Risch, W. Rosner, M. Stadele, U. Dorda, R. Kommling, Michael Specht
Publikováno v:
Solid-State Electronics. 49:1799-1804
High density data flash memories are essentially used in mobile applications. Flash devices have a small form factor, high storage density and low power consumption. For logic applications FinFET type devices are known to have good scalability down t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00b5a29520278fb5d7ef11ffac6f4158
https://doi.org/10.1016/j.sse.2005.10.012
https://doi.org/10.1016/j.sse.2005.10.012
Autor:
Walter M. Weber, M. Stadele, Michael Specht, Rainer Schröter, W. Rosner, T. Schulz, L. Dreeskornfeld, L. Risch, F. Hofmann, Jessica Hartwich, Johannes Kretz, Richard Johannes Luyken, Erhard Landgraf
Publikováno v:
Microelectronic Engineering. :224-228
In this article, ultra-thin-film SOI transistors fabricated by locally recessing the channel regions are presented. SOI MOSFETs with ultra-thin channels offer better scaling properties than bulk transistors due to suppressed short channel effects, re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06ac8806246aaa6949f825cb0a9c25ec
https://doi.org/10.1016/j.mee.2004.12.030
https://doi.org/10.1016/j.mee.2004.12.030
Publikováno v:
IEEE Transactions on Electron Devices. 51:741-748
Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n/sup +/-Si/SiO/sub 2//p-Si capacitors with thicknesses between 0.7 and 4.4 nm. We fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc67d926a01533a257f2bac5f4d809e0
https://doi.org/10.1109/ted.2004.826862
https://doi.org/10.1109/ted.2004.826862
Publikováno v:
Solid-State Electronics. 48:575-580
Using quantum mechanical methods that include the full-band structure of Si and SiO2, we study two non-classical phenomena that occur in MOS transistors at the nanometer-scale: tunneling through ultrathin oxides and quantum confinement in Si layers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31243923cb3e684aef171ecf1844bd08
https://doi.org/10.1016/j.sse.2003.09.032
https://doi.org/10.1016/j.sse.2003.09.032
Autor:
Christian Pacha, Erhard Landgraf, Michael Specht, M. Stadele, Jessica Hartwich, T. Schulz, F. Hofmann, L. Dreeskornfeld, Richard Johannes Luyken, Johannes Kretz, L. Risch, W. Rosner
Publikováno v:
Solid-State Electronics. 48:521-527
Ultra-thin-body silicon-on-insulator (UTB-SOI) is one of the most promising candidates for future CMOS technologies with minimum feature sizes below 50 nm. In this paper, we analyse the impact of different combinations of doping profiles and gate sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6d370a57247c6a405570f0a5bb241d
https://doi.org/10.1016/j.sse.2003.09.021
https://doi.org/10.1016/j.sse.2003.09.021
Publikováno v:
Journal of Computational Electronics. 2:439-442
Using quantum mechanical methods that include the full band structure of Si and SiO2 and a self-consistent potential, we study tunneling through ultrathin oxides. Limitations of the effective-mass approximation (EMA) are investigated. In particular,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc09e1f091fe96c3d8f99add841261d5
https://doi.org/10.1023/b:jcel.0000011467.73718.05
https://doi.org/10.1023/b:jcel.0000011467.73718.05
Autor:
L. Dreeskornfeld, M. Stadele, T. Schulz, W. Rosner, Richard Johannes Luyken, Jessica Hartwich
Publikováno v:
Solid-State Electronics. 47:1199-1203
Drift-diffusion simulations have been carried out to investigate the design space for n-channel fully depleted (FD) SOI transistors with undoped channels and midgap gates in the 25–50 nm gate length regime. Gate length, Si-body thickness, source dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069b53dd6a49c219fd3e1ae60e4219ac
https://doi.org/10.1016/s0038-1101(03)00038-8
https://doi.org/10.1016/s0038-1101(03)00038-8
Publikováno v:
Journal of Applied Physics. 93:2681-2690
Based on the results of three-dimensional atomistic tight-binding calculations, we argue that the effective tunnel mass of SiO2 employed as a fitting parameter in standard transfer-matrix multiple-scattering theory calculations increases strongly as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252e3675251f1f2209f90226ccd86288
https://doi.org/10.1063/1.1541107
https://doi.org/10.1063/1.1541107
Publikováno v:
Solid-State Electronics. 46:1027-1032
To analyze defect-assisted elastic tunneling currents through ultrathin SiO2 gate oxides in metal-oxide semiconductor field-effect transistors (MOSFETs), we have combined semiempirical microscopic tight-binding calculations with full-band Monte Carlo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63978291ae4d2f9b3174e022d3c0923b
https://doi.org/10.1016/s0038-1101(02)00037-0
https://doi.org/10.1016/s0038-1101(02)00037-0