Formation of inversion layers in organic field-effect transistors

Autor: F. van Seijen, M. Spijkman, J. J. Brondijk, Dago M. de Leeuw, P.W.M. Blom

Publikováno v: Physical Review. B: Condensed Matter and Materials Physics, 85(16):165310. AMER PHYSICAL SOC
Physical Review B-Condensed Matter and Materials Physics, 16, 85

An inversion current in unipolar organic field-effect transistors is not observed, which can be due to trapping of electrons or to negligible electron injection. Here, we distinguish between both cases by studying the depletion current of unipolar p-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdf8e850be319f54b006dc6cf6f7d194
https://research.rug.nl/en/publications/39126fb2-1e8a-4900-a52a-b64c0aede48d

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Autor: Anne-Marije Andringa, Nynke Vlietstra, Edsger C. P. Smits, Henrique L. Gomes, Dago M. de Leeuw, Paul W. M. Blom, M. Spijkman, Johan Hendrik Klootwijk

Publikováno v: Sensors and actuators b-Chemical, 171(27), 1172-1179. Elsevier Science
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

Nitrogen dioxide (NO2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The thres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19568426d2d179cdc54c8fcb5fd67873
https://doi.org/10.1016/j.snb.2012.06.062

Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

Autor: René A. J. Janssen, Anne-Marije Andringa, Simon G. J. Mathijssen, Dago M. de Leeuw, Paul A. van Hal, Martijn Kemerink, M. Spijkman, Iain McCulloch

Publikováno v: Advanced materials, 22(45), 5105-+. WILEY-V C H VERLAG GMBH
Advanced Materials, 22(45), 5105-5109. Wiley-VCH Verlag

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a66d69ae4e38bbb8511463a889dcdb3a
https://research.tue.nl/en/publications/c19d6bae-a706-460c-9763-388a95570ddf

Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Autor: Edsger C. P. Smits, Fabio Biscarini, M. Spijkman, Dago M. de Leeuw, Johannes Franciscus Maria Cillessen, Paul W. M. Blom

Publikováno v: Applied Physics Letters, 98(4):043502
Applied Physics Letters, 4, 98

The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum detectable change in electrochemical potential according to the Nernst equation. Here we demonstrate a transducer based on a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0f8117f80d825593defa16778f9bd63
http://resolver.tudelft.nl/uuid:6ac322dd-8ccf-4334-85ef-af5350a7df84

Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution

Autor: Tom C. T. Geuns, Fabio Biscarini, Francesco Zerbetto, Pablo Stoliar, Edsger C. P. Smits, J. J. Brondijk, Tobias Cramer, M. Spijkman, Dago M. de Leeuw, Paul W. M. Blom

Publikováno v: Advanced functional materials
20 (2010): 898–905. doi:10.1002/adfm.200901830
info:cnr-pdr/source/autori:Spijkman, Mark-Jan (1),(2); Brondijk, Jakob J. (1); Geuns Tom C. T. (2); Smits, Edsger C. P. (3); Cramer, Tobias (4); Zerbetto, Francesco (4); Stoliar, Pablo (5); Biscarini, Fabio (5); Blom, Paul W. M. (1),(3); de Leeuw, Dago M.(1),(2)*/titolo:Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution/doi:10.1002%2Fadfm.200901830/rivista:Advanced functional materials (Print)/anno:2010/pagina_da:898/pagina_a:905/intervallo_pagine:898–905/volume:20
Advanced Functional Materials, 20(6), 898-905. WILEY-V C H VERLAG GMBH
Advanced Materials, 898-905

Buried electrodes and protection of the semiconductor with a thing passivation layer are used to yield dual gate organic transducers. The process technology is scaled up to 150 mm wafers. The transducers are potentiometric sensors where the detectors

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9dc59a9682dfda780e849c3b0f939a9d
http://www.cnr.it/prodotto/i/53847