Zobrazeno 1 - 10
of 28
pro vyhledávání: '"M. Siddabathula"'
Autor:
D. Lipp, Z. Zhao, G. Krause, W. Arfaoui, E. Ebrard, G. Bossu, S. Evseev, M. Herklotz, M. Siddabathula
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76bdd0d7a11896487089a1c0c9541b16
https://doi.org/10.1109/irps48203.2023.10117689
https://doi.org/10.1109/irps48203.2023.10117689
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3a08d3054016d3b496629b7cd1cf74
https://doi.org/10.1109/irps48227.2022.9764418
https://doi.org/10.1109/irps48227.2022.9764418
Autor:
T. L. Tan, C. W. Eng, H. Xu, J. M. Soon, E. Ebard, M. Siddabathula, B. F. Phoong, K. H. Poh, M. Prabhu, X. -L. Zhao, J. M. Koo, K. Cho, G.-W. Zhang
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8b26e2a4109364555ea4b095afcdda
https://doi.org/10.1109/irps48227.2022.9764564
https://doi.org/10.1109/irps48227.2022.9764564
Autor:
Jung-Suk Goo, N. Pimparkar, Wafa Arfaoui, Robert Tu, Germain Bossu, Steffen Lehmann, A.B. Icel, Pratik B. Vyas, M. Siddabathula
Publikováno v:
IRPS
Accurate prediction of device aging plays a vital role in the circuit design of advanced-node CMOS technologies. In particular, hot-carrier induced aging is so complicated that its modeling is often significantly simplified, with focus limited to dig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0665d7351a98a74e4d1f77c9a9abe577
https://doi.org/10.1109/irps46558.2021.9405197
https://doi.org/10.1109/irps46558.2021.9405197
Autor:
T. Kauerauf, T. Nigam, B. Min, M. Siddabathula, Germain Bossu, Maria Toledano-Luque, P. Paliwoda, M. Nour
Publikováno v:
IRPS
Standard CMOS reliability has been focused on digital applications and the user profiles associated with these products. However, emerging applications in mobility, automotive, communication networks and data centers require additional, more rigorous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c62195dad78c746d5e9023e7b27aca
https://doi.org/10.1109/irps46558.2021.9405151
https://doi.org/10.1109/irps46558.2021.9405151
Autor:
R. Manuwald, Germain Bossu, A. Muhlhoff, Tianbing Chen, T. Nigam, D. Lipp, Wafa Arfaoui, M. Siddabathula
Publikováno v:
IRPS
Although technology scaling to deep submicron enable higher degrees of semiconductor integration, highly integrated circuit have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df46dc3205a9615c853755c3bc02c74
https://doi.org/10.1109/irps45951.2020.9129479
https://doi.org/10.1109/irps45951.2020.9129479
Akademický článek
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Autor:
Abdellatif Bellaouar, S.N. Ong, S. Embabi, Tianbing Chen, Kok Wai Johnny Chew, Chi Zhang, Germain Bossu, K. Barnett, J. Bordelon, Wafa Arfaoui, M. Siddabathula, S. Janardhanan, R. Taylor, M. Mantravadi
Publikováno v:
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This work shows the excellent HCI (hot-carrier injection) reliability that 22FDX demonstrates for mmWave PA applications. The underlying device physics to explain this performance are also shown. Due to the fact that fully depleted SOI (FDSOI) elimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf4ceedf9beb0d2b416f66ce9b1082b
https://doi.org/10.1109/rfic.2019.8701760
https://doi.org/10.1109/rfic.2019.8701760
Autor:
M. Wiatr, D. Lipp, T. Lehndorff, H. Lochner, M. Siddabathula, T. Sulima, A. Alsioufy, S. Simon, A. Hirler, Walter Hansch, Josef Biba
Publikováno v:
IRPS
Mission profiles and step-stress life tests are depending on cumulative damage models for reliability analysis. Although cumulative damage models exist, they are rarely verified on empirical data of semiconductor devices. In this work, semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86011f51096a3743ee2fac52f7e6e1bf
https://doi.org/10.1109/irps.2019.8720536
https://doi.org/10.1109/irps.2019.8720536
Autor:
M. Wiatr, A. Hirler, Walter Hansch, Josef Biba, S. Simon, T. Sulima, H. Lochner, D. Lipp, M. Siddabathula
Publikováno v:
Journal of Vacuum Science & Technology B. 38:064001
Cumulative damage models are essential for reliability analysis, whether it is for the development of time-saving step-stress or ramp-stress life tests or for the qualification of products against mission-profile-based lifetime requirements. Although
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96c42cb23792e7398e01db8a0cfd9b3
https://doi.org/10.1116/6.0000504
https://doi.org/10.1116/6.0000504