Zobrazeno 1 - 10
of 47
pro vyhledávání: '"M. Shinosky"'
Publikováno v:
Microelectronics Reliability. 55:2727-2747
Both middle-of-line (MOL) gate to contact spacer dielectric and back-end-of-line (BEOL) low- k dielectric breakdown data are commonly convoluted with multiple variables induced by process steps such as lithography, etch, chemical–mechanical polish
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f42d5e87d98b1d993f33a5950188b7
https://doi.org/10.1016/j.microrel.2015.09.017
https://doi.org/10.1016/j.microrel.2015.09.017
Autor:
M. Shinosky, Fen Chen
Publikováno v:
Microelectronics Reliability. 54:529-540
During technology development, the study of low- k time dependent dielectric breakdown (TDDB) is important for assuring robust chip reliability. It has been proposed that the fundamentals of low- k TDDB are closely correlated with the leakage conduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7aeb6f0f90fa0b5864c7a406bf039c0
https://doi.org/10.1016/j.microrel.2013.12.020
https://doi.org/10.1016/j.microrel.2013.12.020
Publikováno v:
IEEE Transactions on Electron Devices. 58:3089-3098
During the study of time-dependent dielectric breakdown (TDDB) of back-end-of-line low- k dielectrics, accurate statistical and area-scaling models are important for the final reliability lifetime projection. The extrapolated product lifetime from hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ebd3d87795918b4b79d09828abf0ab
https://doi.org/10.1109/ted.2011.2159120
https://doi.org/10.1109/ted.2011.2159120
Autor:
Fen Chen, M. Shinosky
Publikováno v:
IEEE Transactions on Electron Devices. 56:2-12
Low-k dielectrics, which are beneficial for chip resistance-capacitance (RC) delay improvement, crosstalk-noise minimization, and power-dissipation reduction, are indispensable for the continuous scaling of advanced VLSI circuits, particularly that o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09514c355ec9e7a131981658fd268aa
https://doi.org/10.1109/ted.2008.2008680
https://doi.org/10.1109/ted.2008.2008680
Publikováno v:
Microelectronics Reliability. 48:1375-1383
With the wide application of low-k and ultra-low-k dielectric materials at the 90 nm technology node and beyond, the long-term reliability of such materials is rapidly becoming a critical challenge for technology qualification. Low-k time-dependent d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59dc1345799f0b228604c9133f9fa9d
https://doi.org/10.1016/j.microrel.2008.06.037
https://doi.org/10.1016/j.microrel.2008.06.037
Autor:
Craig Bocash, Ramachandran Muralidhar, Carole D. Graas, Fen Chen, Kai D. Feng, Chad M. Burke, M. Shinosky
Publikováno v:
IRPS
Voltage or Field acceleration model is crucial for low-k TDDB reliability study and lifetime projection. Over the years, many different acceleration models have been proposed based on different physics. In this paper, a method for a relatively fast s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810de8bebe58be16de807c341d9dc336
https://doi.org/10.1109/irps.2015.7112697
https://doi.org/10.1109/irps.2015.7112697
Autor:
Cathryn Christiansen, Prakash Periasamy, Carole D. Graas, Roger A. Dufresne, Gary StOnge, M. Shinosky, R. Kontra, Fen Chen, Erik Mccullen
Publikováno v:
IRPS
EM reliability evaluations generally rely on monitoring an EM test structure resistance increase caused by void formation during current stress. With technology scaling, the height and width of interconnects are shrinking. Therefore, the base resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e748815d2e4d765e1ccad431526f25fd
https://doi.org/10.1109/irps.2015.7112683
https://doi.org/10.1109/irps.2015.7112683
Autor:
Roger A. Dufresne, Cathryn Christiansen, R. Bolam, Chuck Griffin, Carole D. Graas, Kai Zhao, C. E. Tian, Choon-Leong Lou, Shreesh Narasimha, M. Shinosky, Fen Chen
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables induced by process steps such as lithography, etch, CMP, cleaning, and thin film deposition. The traditional method of stressing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9539f0fe6c5d620bdb33890f4fab8c00
https://doi.org/10.1109/irps.2014.6860610
https://doi.org/10.1109/irps.2014.6860610
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Low-k time dependent dielectric breakdown (TDDB) is commonly considered an important reliability issue. It has been proposed that there is an interrelation of field and temperature dependence between TDDB thermal activation energies and field acceler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac54697135b813f16c79f1bda8fe8689
https://doi.org/10.1109/irps.2013.6531967
https://doi.org/10.1109/irps.2013.6531967
Autor:
K. Kolvenback, Steven W. Mittl, Dan Mocuta, Fen Chen, Yanfeng Wang, John M. Aitken, M. Shinosky, Roger A. Dufresne, William K. Henson
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a59c7b437250a91a9671275be05e1f3
https://doi.org/10.1109/irps.2013.6532104
https://doi.org/10.1109/irps.2013.6532104