Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. Shahriar Rahman"'
Autor:
Timothy Basford, Charles Briscoe Larow, Rakesh Ranjan, Hyunchul Sagong, Gil Heyun Choi, Hwa-Sung Rhee, David J. Moreau, Pavitra Ramadevi Perepa, Maihan Nguyen, Ki-Don Lee, Minhyo Kang, Bong Ki Lee, Carolyn Cariss-Daniels, M. Shahriar Rahman, Colby Callahan
Publikováno v:
IRPS
Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High Performance IO pFET is lowered by additional treatment to maintain the taller Fin profile. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8c4110697aa876f94784c46bfcce66
https://doi.org/10.1109/irps45951.2020.9129066
https://doi.org/10.1109/irps45951.2020.9129066
Autor:
T. Vasen, Guangle Zhou, Chen Chen, Alan Seabaugh, M. Shahriar Rahman, Qin Zhang, Mark A. Wistey, Soo Doo Chae, T. Kosel, Patrick Fay, Qingmin Liu, Rui Li, Huili Grace Xing, Yeqing Lu, Siyuranga O. Koswatta
Publikováno v:
physica status solidi c. 9:389-392
The first fabrication of a III-V tunnel field-effect transistor (TFET) with tunneling directed perpendicular to the gate is reported. This new transistor geometry utilizes an InAs/Al0.45Ga0.55Sb staggered-gap tunnel junction intended for high on curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::897512e76be4df376721981ed68e4fef
https://doi.org/10.1002/pssc.201100241
https://doi.org/10.1002/pssc.201100241
Autor:
Zeynep Celik-Butler, Sergio Pacheco, Ronald V. McBean, Murali M. Chitteboyina, M. Shahriar Rahman, Donald P. Butler
Publikováno v:
Journal of Microelectromechanical Systems. 19:911-918
For specific RF applications, where the use of MEMS is highly attractive, cost-effective reliable packaging is one of the primary barriers to commercialization. Many RF MEMS devices require a hermetic or vacuum operation environment. This paper prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a51493156bf7627b3be585fee9758844
https://doi.org/10.1109/jmems.2010.2055541
https://doi.org/10.1109/jmems.2010.2055541
Publikováno v:
ECS Transactions. 28:273-286
Understanding and minimization of degradation in new generation MOSFETs from stress-induced traps in high-k gate dielectrics is of critical importance. Towards this purpose, high-k dielectrics were subjected to accelerated hot carrier and constant vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f442440aa64e7925615875c684e49d
https://doi.org/10.1149/1.3372582
https://doi.org/10.1149/1.3372582
Publikováno v:
IEEE Communications Letters. 14:242-244
Business and entertainment increasingly depend on WLANs, as they provide flexibility of locations and low maintenance efforts. However in the presence of hidden terminals sender-receiver pairs experience severe packet loss due to collisions. ZigZag d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f38a23fca0d2d736b5622fa269727a
https://doi.org/10.1109/lcomm.2010.03.092252
https://doi.org/10.1109/lcomm.2010.03.092252
Autor:
M. Shahriar Rahman, Zeynep Çelik-Butler, M. A. Quevedo-Lopez, Ajit Shanware, Luigi Colombo, Massimo Macucci, Giovanni Basso
Publikováno v:
AIP Conference Proceedings.
Hafnium based materials are the leading candidates to replace conventional SiON as the gate dielectric in complementary metal‐oxide‐semiconductor devices. Hot carrier and constant voltage stress induced 1/f noise behavior is presented for HfSiON
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c277de61d712a126b1a7397fff4f48
https://doi.org/10.1063/1.3140447
https://doi.org/10.1063/1.3140447
Autor:
Siva Prasad Devireddy, Manuel Quevedo-Lopez, A. Shanware, M. Shahriar Rahman, Zeynep Celik-Butler, Luigi Colombo, Tanvir Morshed
Publikováno v:
AIP Conference Proceedings.
Low frequency noise (LFN) characteristics of HfSiO and HfSiON nMOS with TiN metal gate were compared. Two different methods to introduce nitrogen in HfSiO, plasma and thermal nitridation, were discussed from LFN point of view. Using Multi‐stack Uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a14053b7132cfa549a652af5ec5cf41f
https://doi.org/10.1063/1.2759629
https://doi.org/10.1063/1.2759629
Autor:
Siva Prasad Devireddy, M. Shahriar Rahman, A. Shanware, Zeynep Celik-Butler, Manuel Quevedo-Lopez, Luigi Colombo, Tanvir Morshed
Publikováno v:
Journal of Applied Physics. 103:033706
Nitrided hafnium silicate is the leading candidate for possible replacement of SiON as a gate dielectric. 1/f noise characteristics of plasma and thermally nitrided Hf-based high-dielectric constant (high-k) gate dielectrics were investigated. Plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e841bff91649a6e656fd33344a2d50c
https://doi.org/10.1063/1.2837107
https://doi.org/10.1063/1.2837107
Publikováno v:
Electrochemical and Solid-State Letters. 9:G127
The effect of high pressure (HP) H 2 /D 2 annealing and subsequent N 2 annealing, to enhance reliability, on hafnium-based high-k metal oxide semiconductor field effect transistor (MOSFET) has been studied. HP hydrogen annealing effectively passivate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91af37ddb52dd4545e996284dbe53f20
https://doi.org/10.1149/1.2168287
https://doi.org/10.1149/1.2168287
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