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pro vyhledávání: '"M. Serényi b"'
Autor:
C. Frigeri a, L. Nasi a, M. Serényi b, N.Q. Khánh b, Zs. Szekrényes c, K. Kamarás c, A. Csik d
Publikováno v:
Physics, Chemistry and Application of Nanostructures, edited by V. E. Borisenko, S. V. Gaponenko, V. S. Gurin and C. H. Kam, pp. 176–179. Singapore: World Scientific, 2013
info:cnr-pdr/source/autori:C. Frigeri 1, L. Nasi 1, M. Serényi 2, N. Q. Khánh 2, Zs. Szekrényes3, K. Kamarás 3, A. Csik 4/titolo:From nano-voids to blisters in hydrogenated amorphous silicon/titolo_volume:Physics, Chemistry and Application of Nanostructures/curatori_volume:V. E. Borisenko, S. V. Gaponenko, V. S. Gurin and C. H. Kam/editore: /anno:2013
NANOMEETING-2013, Minsk (BY), 28-31 May 2013
info:cnr-pdr/source/autori:C. Frigeri a, L. Nasi a, M. Serényi b, N.Q. Khánh b, Zs. Szekrényes c, K. Kamarás c, A. Csik d/congresso_nome:NANOMEETING-2013/congresso_luogo:Minsk (BY)/congresso_data:28-31 May 2013/anno:2013/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:C. Frigeri 1, L. Nasi 1, M. Serényi 2, N. Q. Khánh 2, Zs. Szekrényes3, K. Kamarás 3, A. Csik 4/titolo:From nano-voids to blisters in hydrogenated amorphous silicon/titolo_volume:Physics, Chemistry and Application of Nanostructures/curatori_volume:V. E. Borisenko, S. V. Gaponenko, V. S. Gurin and C. H. Kam/editore: /anno:2013
NANOMEETING-2013, Minsk (BY), 28-31 May 2013
info:cnr-pdr/source/autori:C. Frigeri a, L. Nasi a, M. Serényi b, N.Q. Khánh b, Zs. Szekrényes c, K. Kamarás c, A. Csik d/congresso_nome:NANOMEETING-2013/congresso_luogo:Minsk (BY)/congresso_data:28-31 May 2013/anno:2013/pagina_da:/pagina_a:/intervallo_pagine
AFM and FTIR spectroscopy were applied to study the relationship between surface blisters and nanovoids in annealed hydrogenated a-Si. The influence of the H bonding configuration on the way the nanovoids give rise to the blisters is discussed. Annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::19a1a486fce1153c4ad8c49d93d3702e
https://publications.cnr.it/doc/230513
https://publications.cnr.it/doc/230513
Autor:
C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e
Publikováno v:
Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III), pp. 29–30, Firenze, 14-18 May 2012
info:cnr-pdr/source/autori:C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e/congresso_nome:Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III)/congresso_luogo:Firenze/congresso_data:14-18 May 2012/anno:2012/pagina_da:29/pagina_a:30/intervallo_pagine:29–30
info:cnr-pdr/source/autori:C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e/congresso_nome:Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III)/congresso_luogo:Firenze/congresso_data:14-18 May 2012/anno:2012/pagina_da:29/pagina_a:30/intervallo_pagine:29–30
Hydrogen is the element of choice to passivate dangling bonds in amorphous and crystalline semiconductors, like Si, Ge and SiGe because of its single-electron atomic structure. By hydrogenation better electro-optical characteristics are obtained. Hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::81854170aec3df3cbe6cb1bb8de74d24
http://www.cnr.it/prodotto/i/198198
http://www.cnr.it/prodotto/i/198198