Zobrazeno 1 - 10
of 148
pro vyhledávání: '"M. Seelmann"'
Autor:
F. van Raay, Rudiger Quay, F. van Rijs, M. Seelmann, Wolfgang Bronner, Jutta Kuhn, Rudolf Kiefer, Michael Mikulla, M. Musser, Michael Dammann, T. Rodle, K. Riepe, Stefan Müller, Patrick Waltereit, Oliver Ambacher
Publikováno v:
physica status solidi (a). 206:1215-1220
We present a systematic study of epitaxial growth, processing technology, device performance and reliability of our GaN HEMTs and MMICs manufactured on 3 inch SiC substrates. Epitaxy and processing are optimized for both performance and reliability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a4f46ced0e1e99ff40101d89a45f009
https://doi.org/10.1002/pssa.200880774
https://doi.org/10.1002/pssa.200880774
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2008-2015
The influence of plasma and thermal treatments on the structure and composition of sapphire (00.1) surfaces has been studied by hemispherically recorded x-ray photoelectron spectroscopy and diffraction (XPD) to better understand the surface condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c467bba4e1cd3188bb16eebb5c7a367
https://doi.org/10.1116/1.581303
https://doi.org/10.1116/1.581303
Publikováno v:
Journal of Electronic Materials. 25:1293-1299
The structure of the interface formed by the reaction of deposited Sn on Hg0.78Cd0.2Te(lll)B was investigated by hemispherically scanned x-ray photo-electron spectroscopy including x-ray photoelectron diffraction (XPD). The interface formation was fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a53401bc5ecfcdb1aa0dd96ef54230
https://doi.org/10.1007/bf02655022
https://doi.org/10.1007/bf02655022
Publikováno v:
Journal of Electronic Materials. 25:1270-1275
An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition during etching Hg1-x CdxTe with CH4/H2 based plasmas. We find that the addition of N2 to the plasma inhibits polymer deposition in the chamber and on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e9ce3182ba744b4bb1c88639781edc8
https://doi.org/10.1007/bf02655019
https://doi.org/10.1007/bf02655019
Publikováno v:
Journal of Electronic Materials. 24:1155-1160
We report on several new aspects of etching of Hg1−xCdxTe (x = 0.22), HgTe, and CdTe in CH4/H2/Ar plasmas generated by an electron cyclotron resonance plasma source. Using a residual gas analyzer, we have identified elemental Hg, TeH2, Te(CH3)2, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dfa65ed4b58398849efb29f53435c3d
https://doi.org/10.1007/bf02653068
https://doi.org/10.1007/bf02653068
Autor:
Robert C. Keller, M. Seelmann-Eggebert
Publikováno v:
Surface and Interface Analysis. 23:589-600
The technique of retrieving depth profiles from angle-resolved x-ray photoelectron spectroscopy (ARXPS) data is analysed with respect to its depth resolution and its potential to differentiate compositional zones. The usable range of polar angles is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc858048f7e990c746be8a44b5a12277
https://doi.org/10.1002/sia.740230904
https://doi.org/10.1002/sia.740230904
Autor:
Heiko Gulan, Arnulf Leuther, M. Seelmann-Eggebert, Ingmar Kallfass, Thomas Zwick, Sebastian Diebold
Publikováno v:
2012 Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits.
The reliable and efficient design of monolithic millimetre-wave integrated circuits (MMICs) mandates accurate transistor models. With increasing frequency the dimensions of the transistor feeding network can not be neglected and an impedance transfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb7fdc94773be1e3c2945d147a4c832
https://doi.org/10.1109/inmmic.2012.6331919
https://doi.org/10.1109/inmmic.2012.6331919
Publikováno v:
Physical Review B. 48:11838-11845
Using GaAs/AlAs/GaAs heterostructures we report measurements of complete hemispheric Auger-electron diffraction patterns originating from single well-defined subsurface sites within a crystal lattice. With this data set a detailed experimental analys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::832cb7189f5f47cba6b99cce9234e5f3
https://doi.org/10.1103/physrevb.48.11838
https://doi.org/10.1103/physrevb.48.11838
Aims. A solution of the radiative-transfer problem in 3D with arbitrary velocity fields in the Eulerian frame is presented. The method is implemented in our 3D radiative transfer framework and used in the PHOENIX/3D code. It is tested by comparison t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e019ae751e98d318615e1f8c01f4fe80
http://arxiv.org/abs/1007.3419
http://arxiv.org/abs/1007.3419
Autor:
P. Meisen, Marcus Bär, G. Gajjala, Lothar Weinhardt, T. Hofmann, M. Seelmann-Eggebert, Clemens Heske, Yufeng Zhang
In order to study the chemical interaction during interface formation between Pd and SiC, Pd layers of various thicknesses were deposited on structurally disordered SiC surfaces at 800 °C. The Pd/SiC interface, which plays a crucial role for many ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::169aa337a0ba1eadd9f169954255585b
https://publica.fraunhofer.de/handle/publica/222737
https://publica.fraunhofer.de/handle/publica/222737