Zobrazeno 1 - 10
of 33
pro vyhledávání: '"M. Schwartzkopff"'
Publikováno v:
Journal of Porous Materials. 7:85-91
We review some of our recent works on the porous Si luminescence and emphasize the importance of the nonradiative Auger-process in the description of the Si nanocrystal photoluminescence (PL) properties. Due to a very long radiative time already at m
Autor:
Bohuslav Rezek, Wolfram Wersing, M. Schwartzkopff, H. Boubekeur, G. Groos, P. Radojkovic, Rainer Bruchhaus, C.E. Zybill, F. Koch, E. Hartmann
Publikováno v:
Surface Science. 440:221-230
Films of (111) oriented poled ferroelectric lead zirconate titanate (PZT) crystallites on (100)Si/SiO 2 /(111) Pt were investigated by scanning tunneling microscopy (STM), atomic force microscopy (AFM) and small angle X–ray scattering (SAXS). SAXS
Autor:
Jörg Rappich, Th. Dittrich, Pavel K. Kashkarov, F. Koch, M. Schwartzkopff, E. Hartmann, V. Yu. Timoshenko
Publikováno v:
Microelectronic Engineering. 48:75-78
Morphology and electronic properties of hydrogenated Si surfaces are studied by scanning tunneling microscopy and by methods of surface photovoltage and photoluminescence (PL), respectively. The microscopic roughness on the nm scale is more important
Publikováno v:
Surface Science. 437:154-162
Chemically and electrochemically hydrogenated Si surfaces are investigated by surface photovoltage technique, scanning tunneling microscopy, and Fourier transform infrared spectroscopy. The surface states are predominantly of the donor type which can
Publikováno v:
Physical Review Letters. 81:2803-2806
We show that light emission from different systems of silicon nanocrystals does behave as expected for indirect-band-gap quantum dots. Photoluminescence excited on the low energy part of the distribution of Si nanocrystals exhibits a set of narrow pe
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:S701-S705
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:S371-S375
cm-3, the background n-typecharacter can be overcompensated, giving rise to a pronounced radiative transition into the acceptor level located at ≈3.2 eV. The absolute peak intensities, however, markedly depend on the site of excitation at the sampl
Publikováno v:
Physical Review B. 57:3741-3744
We report on luminescence hole burning experiments that provide a clue for the mechanism of photoluminescence of porous silicon. A large fraction of the light emission is suppressed by an intense resonant pump beam, which introduces an Auger nonradia
Publikováno v:
Nanotechnology. 7:376-380
Nanometer-sized particles manufactured by two different techniques and deposited on wet chemically treated Si(111) substrates are explored at room temperature with a scanning tunneling microscope (STM) in the light of their stability upon repeated im
Publikováno v:
Applied Surface Science. 107:212-217
Conducting nanoscale structures (dots, particles and wires) are fabricated by means of four different techniques on chemically cleaned, H-terminated Si substrates and investigated using a scanning tunnelling microscope (STM) operated under high-vacuu