Zobrazeno 1 - 10
of 26
pro vyhledávání: '"M. Schuszter"'
Publikováno v:
physica status solidi (c). :1051-1054
Heat treatment is an essential technological step for making ohmic contacts to compound semiconductors. During the heat treatment a remarkable volatile component (arsenic) loss takes place due to the thermal decomposition of GaAs and the interactions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b26044ec3984bede5546c2431d71be2
https://doi.org/10.1002/pssc.200306326
https://doi.org/10.1002/pssc.200306326
Publikováno v:
2008 6th International Symposium on Intelligent Systems and Informatics.
Here, pattern formation on GaAs (001) surface after electrochemical layer removal with the help of image processing was investigated. The morphology of GaAs surface shown fractal behaviour under non-selective etching conditions. The morphological sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be5b74ca40e32e3044cc785b6dc3d8a7
https://doi.org/10.1109/sisy.2008.4664942
https://doi.org/10.1109/sisy.2008.4664942
Publikováno v:
Thin Solid Films. 317:69-71
The heat treatment of metallised compound semiconductors results material diffusion and evaporation, called volatile component loss. In situ SEM and mass spectrometric study showed, that surface pattern has fractal character at heat treatment tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e6e7e8dcf6c7cc9149ecb828eb9dcf3
https://doi.org/10.1016/s0040-6090(97)00507-5
https://doi.org/10.1016/s0040-6090(97)00507-5
Publikováno v:
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.
Palladium based metal systems can be used to make ohmic contacts to A/sup III/B/sup V/ compound semiconductors. A covering layer of gold is advantageous from the point of view of bonding as well. Gold palladium layers were studied on InP substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9569a26697eb22c8735f8cee2643c9ab
https://doi.org/10.1109/smicnd.1996.557468
https://doi.org/10.1109/smicnd.1996.557468
Publikováno v:
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).
The heat treatment of metallized Au(10 nm)/InP(100), Au(30 nm)/InP(100), Au(85 nm)/InP(100) structures were studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the surface morphology and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5993e0d0dcba8b5f62bc0c37c1d177f
https://doi.org/10.1109/smicnd.1998.733835
https://doi.org/10.1109/smicnd.1998.733835
Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
During device preparation, the metal-compound semiconductor junction endures several heat stresses. Due to the heat stress (or intentional heat treatment) material interdiffusion takes place between the layers. The material transport causes inhomogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca2f6b1e11b33916762fb7b13f7d1526
https://doi.org/10.1109/smicnd.1997.651586
https://doi.org/10.1109/smicnd.1997.651586
Publikováno v:
Multichip Modules with Integrated Sensors ISBN: 9789401066310
Multichip Modules with Integrated Sensors
Multichip Modules with Integrated Sensors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dcc64dfb974a1d4c0f4b94e7cf72bf5
https://doi.org/10.1007/978-94-009-0323-4_32
https://doi.org/10.1007/978-94-009-0323-4_32
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